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      Ultra-low-cost near-infrared photodetectors on silicon

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      Author(s)
      Nazirzadeh, M. Amin
      Atar, Fatih B.
      Turgut, B. Berkan
      Okyay, Ali Kemal
      Date
      2015-02
      Source Title
      Proceedings, Silicon Photonics X - SPIE OPTO, 2015
      Print ISSN
      0277-786X
      Publisher
      SPIE
      Pages
      1 - 7
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
      171
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      157
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      Abstract
      We demonstrate Silicon-only near-infrared (NIR) photodetectors (sensitive up to 2000 nm) that meet large-scale ultralow-cost fabrication requirements. For the detection of infrared photons, we use metal nanoislands that form Schottky contact with Silicon. NIR photons excite plasmon resonances at metal nanoislands and plasmons decay into highly energetic charge carriers (hot electrons). These hot electrons get injected into Silicon (internal photoemission), resulting in photocurrent. Several groups have studied plasmonic nanoantennas using high resolution lithography techniques. In this work, we make use of randomly formed nanoislands for broad-band photoresponse at NIR wavelengths. We observe photoresponse up to 2000 nm wavelength with low dark current density about 50 pA/μm2. The devices exhibit photoresponsivity values as high as 2 mA/W and 600 μA/W at 1.3 μm and 1.55 μm wavelengths, respectively. Thin metal layer was deposited on low-doped n-type Silicon wafer. Rapid thermal annealing results in surface reconstruction of the metal layer into nanoislands. Annealing conditions control the average size of the nanoislands and photoresponse of the devices. An Al-doped Zinc Oxide (AZO) layer was deposited on the nanoislands using thermal atomic layer deposition (ALD) technique to acts as a transparent conductive oxide (TCO) and patterned using photolithography. AZO film creates electrical connection between the nanoislands and also makes a heterojunction to Silicon. Simple and scalable fabrication on Si substrates without the need for any sub-micron lithography or high temperature epitaxy process make these devices good candidates for ultra-low-cost broad-band NIR imaging and spectroscopy applications. © 2015 SPIE.
      Keywords
      Hot electrons
      Infrared detectors
      Plasmonics
      Schottky diodes
      Silicon
      Atomic layer deposition
      Costs
      Electric connectors
      Heterojunctions
      High temperature applications
      Infrared devices
      Lithography
      Metals
      Metamaterial antennas
      Photodetectors
      Photolithography
      Photonic devices
      Photonics
      Photons
      Plasmons
      Rapid thermal annealing
      Schottky barrier diodes
      Semiconducting silicon
      Silicon detectors
      High resolution lithography
      Internal photoemission
      Near infrared photodetectors
      Plasmonics
      Schottky diodes
      Spectroscopy applications
      Sub-micron lithography
      Transparent conductive oxides
      Silicon wafers
      Permalink
      http://hdl.handle.net/11693/28208
      Published Version (Please cite this version)
      http://dx.doi.org/10.1117/12.2078913
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Institute of Materials Science and Nanotechnology (UNAM) 1930
      • Nanotechnology Research Center (NANOTAM) 1063
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