Template-based synthesis of AlN hollow nanofibers via plasma-enhanced atomic layer deposition
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/28170
Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
- Conference Paper 
Aluminum nitride (AlN) hollow nanofibers were synthesized by depositing conformai thin films via plasma-enhanced atomic layer deposition on sacrificial electrospun nylon 66 nanofiber templates having different average fiber diameters. Scanning electron microscopy studies have shown that there is a critical wall thickness-to-inner diameter ratio for these nanostructures to preserve their shapes after the polymeric template has been removed by calcination. Best morphologies were observed for AlN hollow nanofibers prepared by depositing 800 cycles on templates having ∼330 nm average fiber diameter. Al 2p high resolution XPS subpeaks located at 73.5 ± 0.2 eV confirmed the presence of AlN for coated and calcinated samples. Transmission electron microscopy (TEM) images indicated uniform wall thicknesses along the fiber axes. Synthesized AlN hollow nanofibers were polycrystalline with a hexagonal crystal structure as determined by high resolution TEM and selected area electron diffraction.
Showing items related by title, author, creator and subject.
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition Ozgit, C.; Donmez I.; Alevli, M.; Biyikli, N. (2012)We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ...
Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures Tülek, R.; Ilgaz, A.; Gökden, S.; Teke, A.; Öztürk, M.K.; Kasap, M.; Öz̧elik, S.; Arslan, E.; Özbay, E. (2009)The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic chemical vapor ...
Double subband occupation of the two-dimensional electron gas in In xAl1 - XN/AlN/GaN/AlN heterostructures with a low indium content (0.064 ≤ x ≤ 0.140) barrier Lisesivdin, S.B.; Tasli P.; Kasap, M.; Ozturk, M.; Arslan, E.; Ozcelik, S.; Ozbay, E. (2010)We present a carrier transport study on low indium content (0.064 ≤ x ≤ 0.140) InxAl1 - xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33-300 K) and a magnetic field ...