Preparation of Al 2O 3and AlN nanotubes by atomic layer deposition
Materials Research Society Symposium Proceedings
133 - 138
MetadataShow full item record
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/28169
Al 2O 3 and AlN nanotubes were fabricated by depositing conformal thin films via atomic layer deposition (ALD) on electrospun nylon 66 (PA66) nanofiber templates. Depositions were carried out at 200°C, using trimethylaluminum (TMAl), water (H 2O), and ammonia (NH 3) as the aluminum, oxygen, and nitrogen precursors, respectively. Deposition rates of Al 2O 3 and AlN at this temperature were ∼1.05 and 0.86 Å/cycle. After the depositions, Al 2O 3- and AlN-coated nanofibers were calcinated at 500°C for 2 h in order to remove organic components. Nanotubes were characterized by using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). AlN nanotubes were polycrystalline as determined by high resolution TEM (HR-TEM) and selected area electron diffraction (SAED). TEM images of all the samples reported in this study indicated uniform wall thicknesses. © 2012 Materials Research Society.
Showing items related by title, author, creator and subject.
Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 °c Akram, R.; Dede, M.; Oral, A. (American Vacuum Society, 2009)The authors present a comparative study on imaging capabilities of three different micro-Hall probe sensors fabricated from narrow and wide band gap semiconductors for scanning hall probe microscopy at variable temperatures. ...
Dynamical screening effects in hot-electron scattering from electron-hole plasma and LO-phonon modes in quantum wires Bennett, C. R.; Tanatar, B.; Constantinou, N. C. (Elsevier, 1996)We present a fully dynamical and finite temperature study of the hot-electron momentum relaxation rate and the power loss in a coupled system of electron-hole plasma and bulk LO-phonons in a quantum wire structure. ...
Balkan, N.; O'Brien-Davies, A.; Thoms, A. B.; Potter, R. J.; Poolton, N.; Adams, M. J.; Masum J.; Bek, A.; Serpenguzel, A.; Aydinli, A.; Roberts J. S. (SPIE - The International Society for Optical Engineering, 1998-01)The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga 1-xAlxAs p- n ...