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dc.contributor.authorRizk, A.en_US
dc.contributor.authorOruç, Feyza B.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorNayfeh, A.en_US
dc.coverage.spatialBirmingham, UKen_US
dc.date.accessioned2016-02-08T12:12:08Z
dc.date.available2016-02-08T12:12:08Z
dc.date.issued2012en_US
dc.identifier.urihttp://hdl.handle.net/11693/28137
dc.descriptionDate of Conference: 20-23 Aug. 2012en_US
dc.description.abstractA thin film ZnO charge trapping memory cell with embedded nanoparticles is demonstrated by Physics Based TCAD simulation. The results show 3V increase in the Vt shift due to the nanoparticles for the same operating voltage. In addition a 6V reduction in the programming voltage is obtained due the nanoparticles. In addition, the effect of the trapping layer and tunnel oxide scaling on the 10 year retention time is studied. © 2012 IEEE.en_US
dc.language.isoEnglishen_US
dc.source.title2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/NANO.2012.6322033en_US
dc.subjectCharge Trappingen_US
dc.subjectMemoryen_US
dc.subjectNanoen_US
dc.subjectNanoparticlesen_US
dc.subjectZnOen_US
dc.subjectCharge trapping memoriesen_US
dc.subjectEmbedded nanoparticlesen_US
dc.subjectNanoen_US
dc.subjectOperating voltageen_US
dc.subjectPhysics-baseden_US
dc.subjectProgramming voltageen_US
dc.subjectRetention timeen_US
dc.subjectTCAD simulationen_US
dc.subjectTrapping layersen_US
dc.subjectTunnel oxidesen_US
dc.subjectZnOen_US
dc.subjectCharge trappingen_US
dc.subjectData storage equipmenten_US
dc.subjectNanotechnologyen_US
dc.subjectZinc oxideen_US
dc.subjectNanoparticlesen_US
dc.titleZnO based charge trapping memory with embedded nanoparticlesen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.identifier.doi10.1109/NANO.2012.6322033en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorOkyay, Ali Kemal


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