ZnO based charge trapping memory with embedded nanoparticles

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Author
Rizk, A.
Oruc F.B.
Okyay, A., K.
Nayfeh, A.
Date
2012
Source Title
Proceedings of the IEEE Conference on Nanotechnology
Print ISSN
19449399
Language
English
Type
Conference Paper
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Abstract
A thin film ZnO charge trapping memory cell with embedded nanoparticles is demonstrated by Physics Based TCAD simulation. The results show 3V increase in the Vt shift due to the nanoparticles for the same operating voltage. In addition a 6V reduction in the programming voltage is obtained due the nanoparticles. In addition, the effect of the trapping layer and tunnel oxide scaling on the 10 year retention time is studied. © 2012 IEEE.
Keywords
Charge Trapping
Memory
Nano
Nanoparticles
ZnO
Charge trapping memories
Embedded nanoparticles
Nano
Operating voltage
Physics-based
Programming voltage
Retention time
TCAD simulation
Trapping layers
Tunnel oxides
ZnO
Charge trapping
Data storage equipment
Nanotechnology
Zinc oxide
Nanoparticles
Permalink
http://hdl.handle.net/11693/28137
Published Version (Please cite this version)
http://dx.doi.org/10.1109/NANO.2012.6322033
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