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      • Department of Electrical and Electronics Engineering
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      ZnO based charge trapping memory with embedded nanoparticles

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      Author
      Rizk, A.
      Oruç, Feyza B.
      Okyay, Ali Kemal
      Nayfeh, A.
      Date
      2012
      Source Title
      2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)
      Publisher
      IEEE
      Language
      English
      Type
      Conference Paper
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      Abstract
      A thin film ZnO charge trapping memory cell with embedded nanoparticles is demonstrated by Physics Based TCAD simulation. The results show 3V increase in the Vt shift due to the nanoparticles for the same operating voltage. In addition a 6V reduction in the programming voltage is obtained due the nanoparticles. In addition, the effect of the trapping layer and tunnel oxide scaling on the 10 year retention time is studied. © 2012 IEEE.
      Keywords
      Charge Trapping
      Memory
      Nano
      Nanoparticles
      ZnO
      Charge trapping memories
      Embedded nanoparticles
      Nano
      Operating voltage
      Physics-based
      Programming voltage
      Retention time
      TCAD simulation
      Trapping layers
      Tunnel oxides
      ZnO
      Charge trapping
      Data storage equipment
      Nanotechnology
      Zinc oxide
      Nanoparticles
      Permalink
      http://hdl.handle.net/11693/28137
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/NANO.2012.6322033
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      • Department of Electrical and Electronics Engineering 3524
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