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dc.contributor.authorEren, Gulesinen_US
dc.contributor.authorŞen, Özlem A.en_US
dc.contributor.authorBölükbaş, Basaren_US
dc.contributor.authorKurt, Gökhanen_US
dc.contributor.authorArıcan, Orkunen_US
dc.contributor.authorCengiz, Ömeren_US
dc.contributor.authorÜnal, Sıla T.K.en_US
dc.contributor.authorDurmuş, Yıldırımen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialBangkok, Thailanden_US
dc.date.accessioned2016-02-08T12:11:30Z
dc.date.available2016-02-08T12:11:30Z
dc.date.issued2012en_US
dc.identifier.urihttp://hdl.handle.net/11693/28113
dc.descriptionDate of Conference: 3-5 Dec. 2012en_US
dc.description.abstractThis paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.en_US
dc.language.isoEnglishen_US
dc.source.title2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/EDSSC.2012.6482767en_US
dc.subjectGaN HEMTen_US
dc.subjectCoplanar wave-guide (CPW)en_US
dc.subjectGain equalizationen_US
dc.subjectGaN HEMTsen_US
dc.subjectHemt technologiesen_US
dc.subjectMatching networksen_US
dc.subjectMonolithic microwave integrated circuits (MMIC)en_US
dc.subjectMulti-octave bandwidthsen_US
dc.subjectSmall signal gainen_US
dc.subjectAmplifiers (electronic)en_US
dc.subjectBroadband amplifiersen_US
dc.subjectCoplanar waveguidesen_US
dc.subjectElectron devicesen_US
dc.subjectElectronic equipment testingen_US
dc.subjectFrequency bandsen_US
dc.subjectGallium nitrideen_US
dc.subjectPower amplifiersen_US
dc.subjectMonolithic microwave integrated circuitsen_US
dc.titleDesign of multi-octave band GaN-HEMT power amplifieren_US
dc.typeConference Paperen_US
dc.departmentNANOTAM - Nanotechnology Research Center
dc.departmentDepartment of Electrical and Electronics Engineering
dc.identifier.doi10.1109/EDSSC.2012.6482767en_US
dc.publisherIEEEen_US


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