Design of multi-octave band GaN-HEMT power amplifier

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Author
Eren, Gulesin
Şen, Özlem A.
Bölükbaş, Basar
Kurt, Gökhan
Arıcan, Orkun
Cengiz, Ömer
Ünal, Sıla T.K.
Durmuş, Yıldırım
Özbay, Ekmel
Date
2012
Source Title
2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC)
Publisher
IEEE
Language
English
Type
Conference Paper
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Abstract
This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.
Keywords
GaN HEMT
Coplanar wave-guide (CPW)
Gain equalization
GaN HEMTs
Hemt technologies
Matching networks
Monolithic microwave integrated circuits (MMIC)
Multi-octave bandwidths
Small signal gain
Amplifiers (electronic)
Broadband amplifiers
Coplanar waveguides
Electron devices
Electronic equipment testing
Frequency bands
Gallium nitride
Power amplifiers
Monolithic microwave integrated circuits
Permalink
http://hdl.handle.net/11693/28113
Published Version (Please cite this version)
http://dx.doi.org/10.1109/EDSSC.2012.6482767
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