Design of multi-octave band GaN-HEMT power amplifier
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Date Issued
2012Journal Title
2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
Language
English
Type
Conference Paper
Please cite this item using this persistent URL
http://hdl.handle.net/11693/28113Abstract
This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.
Published as
http://dx.doi.org/10.1109/EDSSC.2012.6482767Collections
- Conference Paper [2294]
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