Design of multi-octave band GaN-HEMT power amplifier
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Date
2012Journal Title
2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
Language
English
Type
Conference Paper
Metadata
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http://hdl.handle.net/11693/28113Abstract
This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.
Published as
http://dx.doi.org/10.1109/EDSSC.2012.6482767Collections
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