Design of multi-octave band GaN-HEMT power amplifier
2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
MetadataShow full item record
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/28113
This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.
Showing items related by title, author, creator and subject.
Kracht D.; Sayinc H.; Yilmaz S.; Wysmolek M.; Hausmann K.; Ottenhues C.; Wandt D.; Wienke A.; Neumann J. (Elsevier B.V., 2016)We report on a variety of continuous wave and pulsed laser sources based on Thulium- and Holmium-doped materials, emitting in the spectral range around 2 μm. This includes continuous wave Thulium-doped fiber lasers which ...
Cengiz O.; Sen O.; Ozbay, E. (Institute of Electrical and Electronics Engineers Inc., 2014)This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain ...
Microjoule - energy, 1 MHz repetition rate pulses from all - fiber - integrated nonlinear chirped - pulse amplifier Kalaycioglu, H.; Oktem, B.; Şenel, Ç.; Paltani, P. P.; Ilday, F. Ö. (Optical Society of America, 2010-03-23)We demonstrate generation of pulses with up to 4 μJ energy at 1 MHz repetition rate through nonlinear chirped-pulse amplification in an entirely fiber-integrated amplifier, seeded by a fiber oscillator. The peak power and ...