Design of multi-octave band GaN-HEMT power amplifier

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Design of multi-octave band GaN-HEMT power amplifier.pdf (996.41 KB)

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2012

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Abstract

This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.

Source Title

2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC)

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IEEE

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Keywords

GaN HEMT, Coplanar wave-guide (CPW), Gain equalization, GaN HEMTs, Hemt technologies, Matching networks, Monolithic microwave integrated circuits (MMIC), Multi-octave bandwidths, Small signal gain, Amplifiers (electronic), Broadband amplifiers, Coplanar waveguides, Electron devices, Electronic equipment testing, Frequency bands, Gallium nitride, Power amplifiers, Monolithic microwave integrated circuits

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http://hdl.handle.net/11693/28113

Published Version (Please cite this version)

http://dx.doi.org/10.1109/EDSSC.2012.6482767

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Scholarly Publications - NANOTAM
Scholarly Publications - Electrical and Electronics Engineering

Language

English

Type

Conference Paper