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      Design of multi-octave band GaN-HEMT power amplifier

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      Author
      Eren, Gulesin
      Şen, Özlem A.
      Bölükbaş, Basar
      Kurt, Gökhan
      Arıcan, Orkun
      Cengiz, Ömer
      Ünal, Sıla T.K.
      Durmuş, Yıldırım
      Özbay, Ekmel
      Date
      2012
      Source Title
      2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC)
      Publisher
      IEEE
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.
      Keywords
      GaN HEMT
      Coplanar wave-guide (CPW)
      Gain equalization
      GaN HEMTs
      Hemt technologies
      Matching networks
      Monolithic microwave integrated circuits (MMIC)
      Multi-octave bandwidths
      Small signal gain
      Amplifiers (electronic)
      Broadband amplifiers
      Coplanar waveguides
      Electron devices
      Electronic equipment testing
      Frequency bands
      Gallium nitride
      Power amplifiers
      Monolithic microwave integrated circuits
      Permalink
      http://hdl.handle.net/11693/28113
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/EDSSC.2012.6482767
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Nanotechnology Research Center (NANOTAM) 1006
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