Design of multi-octave band GaN-HEMT power amplifier
Date
2012Source Title
2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
Language
English
Type
Conference PaperItem Usage Stats
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Show full item recordAbstract
This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.
Keywords
amplifiergain equalization networks
GaN HEMT
multi-octave bandwidth
wide-band matching networks
Coplanar wave-guide (CPW)
Gain equalization
GaN HEMTs
Hemt technologies
Matching networks
Monolithic microwave integrated circuits (MMIC)
Multi-octave bandwidths
Small signal gain
Amplifiers (electronic)
Broadband amplifiers
Coplanar waveguides
Electron devices
Electronic equipment testing
Frequency bands
Gallium nitride
Power amplifiers
Monolithic microwave integrated circuits
Permalink
http://hdl.handle.net/11693/28113Published Version (Please cite this version)
http://dx.doi.org/10.1109/EDSSC.2012.6482767Collections
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