Design of multi-octave band GaN-HEMT power amplifier
2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
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This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.
gain equalization networks
wide-band matching networks
Coplanar wave-guide (CPW)
Monolithic microwave integrated circuits (MMIC)
Small signal gain
Electronic equipment testing
Monolithic microwave integrated circuits
Published Version (Please cite this version)http://dx.doi.org/10.1109/EDSSC.2012.6482767
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