Design of multi-octave band GaN-HEMT power amplifier
Date
2012Journal Title
2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
Language
English
Type
Conference PaperItem Usage Stats
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Show full item recordAbstract
This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride (GaN) HEMT technology. The amplifier has a small signal gain of 7 ± 0.75 dB. The output power at 3dB compression is better than 24 dBm with 16%-19% drain efficiency for the whole 6 GHz-18 GHz frequency band under continuous wave (CW) power. © 2012 IEEE.
Keywords
amplifiergain equalization networks
GaN HEMT
multi-octave bandwidth
wide-band matching networks
Coplanar wave-guide (CPW)
Gain equalization
GaN HEMTs
Hemt technologies
Matching networks
Monolithic microwave integrated circuits (MMIC)
Multi-octave bandwidths
Small signal gain
Amplifiers (electronic)
Broadband amplifiers
Coplanar waveguides
Electron devices
Electronic equipment testing
Frequency bands
Gallium nitride
Power amplifiers
Monolithic microwave integrated circuits
Permalink (Please cite this version)
http://hdl.handle.net/11693/28113Published Version
http://dx.doi.org/10.1109/EDSSC.2012.6482767Collections
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