Zno nanostructures via hydrothermal synthesis on atomic layer deposited seed-layers
View/
Date Issued
2015Journal Title
2015 IEEE 35th International Conference on Electronics and Nanotechnology, ELNANO 2015 - Conference Proceedings
Publisher
Institute of Electrical and Electronics Engineers Inc.
Language
English
Type
Conference Paper
Please cite this item using this persistent URL
http://hdl.handle.net/11693/28041Abstract
The original results of two different types of ZnO nanostructures grown via hydrothermal synthesis on ZnO seed-layers coated by atomic layer deposition process on Si substrates were presented. Scanning electron microscopy and X-ray diffractometry were used for the analysis of resulting nanostructured ZnO samples. The influence of annealing on crystal properties of the ZnO nanostructures was shown. It was ascertained that solution composition had a significant influence on the morphology of nanostructures and post-growth annealing modified the crystal properties of nanostructures. © 2015 IEEE.
Published as
http://dx.doi.org/10.1109/ELNANO.2015.7146841Collections
- Conference Paper [2294]
Related items
Showing items related by title, author, creator and subject.
-
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
(2012)We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ... -
The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
(2011)The influence of N2/H2 and ammonia as N source materials on the properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum as metal source has been studied. The -2Θ grazing-incidence ... -
Atomic layer deposition of GaN at low temperatures
(2012)The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH 3) as the ...
