Zno nanostructures via hydrothermal synthesis on atomic layer deposited seed-layers
View/
Date
2015Journal Title
2015 IEEE 35th International Conference on Electronics and Nanotechnology, ELNANO 2015 - Conference Proceedings
Publisher
Institute of Electrical and Electronics Engineers Inc.
Pages
89 - 92
Language
English
Type
Conference Paper
Metadata
Show full item recordPlease cite this item using this persistent URL
http://hdl.handle.net/11693/28041Abstract
The original results of two different types of ZnO nanostructures grown via hydrothermal synthesis on ZnO seed-layers coated by atomic layer deposition process on Si substrates were presented. Scanning electron microscopy and X-ray diffractometry were used for the analysis of resulting nanostructured ZnO samples. The influence of annealing on crystal properties of the ZnO nanostructures was shown. It was ascertained that solution composition had a significant influence on the morphology of nanostructures and post-growth annealing modified the crystal properties of nanostructures. © 2015 IEEE.
Published as
https://doi.org/10.1109/ELNANO.2015.7146841Collections
Related items
Showing items related by title, author, creator and subject.
-
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
(2012)We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ... -
Seed Layer Assisted Hydrothermal Deposition of Low-resistivity ZnO Thin Films
(Materials Research Society, 2017)In this work, we describe the combination of hydrothermal and atomic layer deposition (ALD) for growing low-resistivity ZnO polycrystalline continuous films. The effect of the thickness of ALD seed layers on the morphology ... -
Effect of film thickness on the electrical properties of AlN films prepared by plasma-enhanced atomic layer deposition
(Institute of Electrical and Electronics Engineers Inc., 2015)In this paper, AlN thin films with two different thicknesses, i.e., 7 and 47 nm, were deposited at 200 °C on p-type Si substrates by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia. To investigate ...
