Surface evolution of 4H-SiC(0001) during in-situ surface preparation and its influence on graphene properties
Ul Hassan J.
Materials Science Forum
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/28021
The evolution of SiC surface morphology during graphene growth process has been studied through the comparison of substrate surface step structure after in-situ etching and graphene growth in vacuum. Influence of in-situ substrate surface preparation on the properties of graphene was studied through the comparison of graphene layers on etched and un-etched substrates grown under same conditions. © (2013) Trans Tech Publications, Switzerland.
- Conference Paper 
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