Show simple item record

dc.contributor.authorOkyay, A., K.en_US
dc.contributor.authorAygun L.E.en_US
dc.contributor.authorOruc F.B.en_US
dc.date.accessioned2016-02-08T12:08:18Z
dc.date.available2016-02-08T12:08:18Z
dc.date.issued2013en_US
dc.identifier.issn0277786X
dc.identifier.urihttp://hdl.handle.net/11693/28012
dc.description.abstractIn order to demonstrate tunable absorption characteristics of ZnO, photodetection properties of ZnO based thin-film transistors are investigated. By controlling the occupancy of the trap states, the optical absorption coefficient of ZnO in the visible light spectrum is actively tuned with gate bias. An order of magnitude change of absorption coefficient is achieved. An optical modulator is proposed exploiting such tunable absorption mechanism. © 2013 SPIE.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.2005558en_US
dc.subjectAtomic layer depositionen_US
dc.subjectMetal oxidesen_US
dc.subjectOptical modulatoren_US
dc.subjectThin film transistoren_US
dc.subjectTunable absorberen_US
dc.subjectZnOen_US
dc.subjectAbsorption characteristicsen_US
dc.subjectAbsorption co-efficienten_US
dc.subjectAbsorption mechanismsen_US
dc.subjectMetal oxidesen_US
dc.subjectOptical absorption coefficientsen_US
dc.subjectTunable absorberen_US
dc.subjectVisible wavelengthsen_US
dc.subjectZnOen_US
dc.subjectAtomic layer depositionen_US
dc.subjectLight modulatorsen_US
dc.subjectThin film transistorsen_US
dc.subjectZinc oxideen_US
dc.titleZnO based optical modulator in the visible wavelengthsen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentUNAM - Institute of Materials Science and Nanotechnology
dc.citation.volumeNumber8626en_US
dc.identifier.doi10.1117/12.2005558en_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record