High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers
Author
Ergun, Y.
Hostut, M.
Tansel, T.
Muti, bdullah
Kilic, A.
Turan, R.
Aydınlı, Atilla
Date
2013Source Title
Proceedings of SPIE
Publisher
SPIE
Volume
8704
Language
English
Type
Conference PaperItem Usage Stats
173
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Abstract
We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave functions towards the GaSb/InAs interface to perform strong overlap under reverse bias. Experimental results show that, with only 20 periods of intrinsic layers, dark current density and dynamic resistance at -50 mV bias are measured as 6×10-3 A/cm2 and 148 ωcm2 at 77K, respectively. Under zero bias, high spectral response of 1.2A/W is obtained at 5 μm with 50% cut-off wavelengths (λc) of 6 μm. With this new design, devices with only 146 nm thick i-regions exhibit a quantum efficiency of 42% at 3 μm with front-side illimunation and no anti-reflection coatings. © 2013 SPIE.
Keywords
Mid-Wave-Infrared PhotodiodeN-structure InAs/AlSb/GaSb superlattice pin photodiode
Cutoff wavelengths
Dynamic resistance
High quantum efficiency
Hole wave functions
InAs/GaSb
Mid-wave-infrared photodiodes
Pin photodiode
Type-II superlattices
Infrared radiation
Photodiodes
Quantum efficiency
Superlattices
Permalink
http://hdl.handle.net/11693/27976Published Version (Please cite this version)
http://dx.doi.org/10.1117/12.2016133Collections
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