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      High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers

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      Author
      Ergun, Y.
      Hostut, M.
      Tansel, T.
      Muti, bdullah
      Kilic, A.
      Turan, R.
      Aydınlı, Atilla
      Date
      2013
      Source Title
      Proceedings of SPIE
      Publisher
      SPIE
      Volume
      8704
      Language
      English
      Type
      Conference Paper
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      131
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      Abstract
      We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave functions towards the GaSb/InAs interface to perform strong overlap under reverse bias. Experimental results show that, with only 20 periods of intrinsic layers, dark current density and dynamic resistance at -50 mV bias are measured as 6×10-3 A/cm2 and 148 ωcm2 at 77K, respectively. Under zero bias, high spectral response of 1.2A/W is obtained at 5 μm with 50% cut-off wavelengths (λc) of 6 μm. With this new design, devices with only 146 nm thick i-regions exhibit a quantum efficiency of 42% at 3 μm with front-side illimunation and no anti-reflection coatings. © 2013 SPIE.
      Keywords
      Mid-Wave-Infrared Photodiode
      N-structure InAs/AlSb/GaSb superlattice pin photodiode
      Cutoff wavelengths
      Dynamic resistance
      High quantum efficiency
      Hole wave functions
      InAs/GaSb
      Mid-wave-infrared photodiodes
      Pin photodiode
      Type-II superlattices
      Infrared radiation
      Photodiodes
      Quantum efficiency
      Superlattices
      Permalink
      http://hdl.handle.net/11693/27976
      Published Version (Please cite this version)
      http://dx.doi.org/10.1117/12.2016133
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      • Department of Physics 2345
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