High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers
Proceedings of SPIE - The International Society for Optical Engineering
Item Usage Stats
MetadataShow full item record
We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave functions towards the GaSb/InAs interface to perform strong overlap under reverse bias. Experimental results show that, with only 20 periods of intrinsic layers, dark current density and dynamic resistance at -50 mV bias are measured as 6×10-3 A/cm2 and 148 ωcm2 at 77K, respectively. Under zero bias, high spectral response of 1.2A/W is obtained at 5 μm with 50% cut-off wavelengths (λc) of 6 μm. With this new design, devices with only 146 nm thick i-regions exhibit a quantum efficiency of 42% at 3 μm with front-side illimunation and no anti-reflection coatings. © 2013 SPIE.
N-structure InAs/AlSb/GaSb superlattice pin photodiode
spectral response of InAs/GaSb
High quantum efficiency
Hole wave functions
Permalink (Please cite this version)http://hdl.handle.net/11693/27976
Showing items related by title, author, creator and subject.
Bıyıklı, Necmi (Bilkent University, 2004)High-performance detection of ultraviolet (UV) radiation is of great importance for a wide range of applications including flame sensing, environmental (ozone layer) monitoring, detection of biological/chemical ...
Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared Tansel, T.; Kutluer, K.; Muti, A.; Salihoglu O.; Aydinli, A.; Turan, R. (2013)We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid- Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise ...
Biyikli, N.; Kimukin I.; Kartaloglu, T.; Aytur O.; Ozbay, E. (2002)In this paper we present our efforts on the design, fabrication and characterization of high-speed, visible-blind, GaN-based ultra-violet (UV) photodiodes using indium-tin-oxide (ITO) Schottky contacts. ITO is known as a ...