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dc.contributor.authorSalihoğlu, Ömeren_US
dc.contributor.authorMuti, Abdullahen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.coverage.spatialBaltimore, Maryland, United Statesen_US
dc.date.accessioned2016-02-08T12:07:07Z
dc.date.available2016-02-08T12:07:07Z
dc.date.issued2013en_US
dc.identifier.urihttp://hdl.handle.net/11693/27973
dc.descriptionConference name: Proceedings of SPIE Infrared Technology and Applications XXXIXen_US
dc.description.abstractPoor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps leading to surface leakage currents that short circuit diode action. Good passivation, therefore, is critical in the fabrication of high performance devices. Silicondioxide has been the main stay of passivation for commercial photodetectors, deposited at high temperatures and high RF powers using plasma deposition techniques. In photodetectors based on III-V compounds, sulphur passivation has been shown to replace oxygen and saturate the dangling bonds. Despite its effectiveness, it degrades over time. More effort is required to create passivation layers which eliminate surface leakage current. In this work, we propose the use of sulphur based octadecanethiol (ODT), CH3(CH2)17SH, as a passivation layer for the InAs/GaSb superlattice photodetectors that acts as a self assembled monolayer (SAM). ODT SAMs consist of a chain of 18 carbon atoms with a sulphur atom at its head. ODT Thiol coating is a simple process that consist of dipping the sample into the solution for a prescribed time. Excellent electrical performance of diodes tested confirm the effectiveness of the sulphur head stabilized by the intermolecular interaction due to van der Walls forces between the long chains of ODT SAM which results in highly stable ultrathin hydrocarbon layers without long term degradation. © 2013 SPIE.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of SPIEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.2015521en_US
dc.subjectInAs/GaSben_US
dc.subjectODTen_US
dc.subjectPassivationen_US
dc.subjectPhotodetectoren_US
dc.subjectSAMen_US
dc.subjectSulfideen_US
dc.subjectSuperlatticeen_US
dc.subjectThiolen_US
dc.subjectInAs/GaSben_US
dc.subjectODTen_US
dc.subjectSAMen_US
dc.subjectSulfideen_US
dc.subjectThiolen_US
dc.subjectChainsen_US
dc.subjectDangling bondsen_US
dc.subjectIndium antimonidesen_US
dc.subjectInfrared radiationen_US
dc.subjectLeakage currentsen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotonsen_US
dc.subjectSelf assembled monolayersen_US
dc.subjectSulfuren_US
dc.subjectSuperlatticesen_US
dc.subjectVan der Waals forcesen_US
dc.subjectPassivationen_US
dc.titleThiol passivation of MWIR Type II superlattice photodetectorsen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physics
dc.citation.volumeNumber8704en_US
dc.identifier.doi10.1117/12.2015521en_US
dc.publisherSPIEen_US


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