Semiconductor-less photovoltaic device
Date
2013Source Title
2013 IEEE Photonics Conference
Publisher
IEEE
Pages
574 - 575
Language
English
Type
Conference PaperItem Usage Stats
205
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155
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Abstract
We demonstrate a novel semiconductor-less photovoltaic device and investigate the plasmonic effects on this device structure. The device is made of metal and dielectric layers and the operation is based on hot carrier collection. We present the use of surface plasmons to improve energy conversion efficiency. The field localization provided by surface plasmons confine the incident light in the metal layer, increasing the optical absorption and hot electron generation rate inside the metal layer. The device consists of two tandem MIM (metal-insulator-metal) junctions. Bottom MIM junction acts as a rectifying diode and top MIM junction is used to excite surface plasmons. The device operation principle as well as the topology will be discussed in detail. © 2013 IEEE.
Keywords
Hot electronmetal-insulator-metal (MIM)
photovoltaics
surface plasmons
Carrier collection
Device operations
Field localization
Hot electron generation
Metal insulator metals
Photovoltaic devices
Photovoltaics
Surface plasmons
Energy conversion
Hot electrons
Metal insulator boundaries
Photonics
Photovoltaic effects
Plasmons
Semiconductor junctions
MIM devices
Permalink
http://hdl.handle.net/11693/27924Published Version (Please cite this version)
http://dx.doi.org/10.1109/IPCon.2013.6656693Collections
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