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      Semiconductor-less photovoltaic device

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      Author
      Atar, Fatih B.
      Battal, Enes
      Aygun, Levent E.
      Dağlar, Bihter
      Bayındır, Mehmet
      Okyay, Ali Kemal
      Date
      2013
      Source Title
      2013 IEEE Photonics Conference
      Publisher
      IEEE
      Pages
      574 - 575
      Language
      English
      Type
      Conference Paper
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      Abstract
      We demonstrate a novel semiconductor-less photovoltaic device and investigate the plasmonic effects on this device structure. The device is made of metal and dielectric layers and the operation is based on hot carrier collection. We present the use of surface plasmons to improve energy conversion efficiency. The field localization provided by surface plasmons confine the incident light in the metal layer, increasing the optical absorption and hot electron generation rate inside the metal layer. The device consists of two tandem MIM (metal-insulator-metal) junctions. Bottom MIM junction acts as a rectifying diode and top MIM junction is used to excite surface plasmons. The device operation principle as well as the topology will be discussed in detail. © 2013 IEEE.
      Keywords
      Hot electron
      metal-insulator-metal (MIM)
      photovoltaics
      surface plasmons
      Carrier collection
      Device operations
      Field localization
      Hot electron generation
      Metal insulator metals
      Photovoltaic devices
      Photovoltaics
      Surface plasmons
      Energy conversion
      Hot electrons
      Metal insulator boundaries
      Photonics
      Photovoltaic effects
      Plasmons
      Semiconductor junctions
      MIM devices
      Permalink
      http://hdl.handle.net/11693/27924
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/IPCon.2013.6656693
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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