Semiconductor-less photovoltaic device
Okyay, A., K.
2013 IEEE Photonics Conference, IPC 2013
574 - 575
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/27924
We demonstrate a novel semiconductor-less photovoltaic device and investigate the plasmonic effects on this device structure. The device is made of metal and dielectric layers and the operation is based on hot carrier collection. We present the use of surface plasmons to improve energy conversion efficiency. The field localization provided by surface plasmons confine the incident light in the metal layer, increasing the optical absorption and hot electron generation rate inside the metal layer. The device consists of two tandem MIM (metal-insulator-metal) junctions. Bottom MIM junction acts as a rectifying diode and top MIM junction is used to excite surface plasmons. The device operation principle as well as the topology will be discussed in detail. © 2013 IEEE.
Hot electron generation
Metal insulator metals
Metal insulator boundaries
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