Show simple item record

dc.contributor.authorOzbay, E.en_US
dc.contributor.authorBiyikli, N.en_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorAytur, O.en_US
dc.date.accessioned2016-02-08T12:02:48Z
dc.date.available2016-02-08T12:02:48Z
dc.date.issued1999en_US
dc.identifier.issn1092-8081
dc.identifier.urihttp://hdl.handle.net/11693/27844
dc.description.abstractThe fabrication of ITO (indium tin oxide)-AlAs-based resonant cavity enhanced Schottky photodiodes was examined. The device structure was designed to achieve a low-loss cavity around a 840 nm optical communication window. The layers were grown by molecular beam epitaxy on a GaAs substrate. Photoresponse measurements were carried out in 750-900 nm wavelength range using a tungsten-halogen projection lamp as the light source and single pass monochromator. Although the discrepancy between the experiment and theory was quite large, a nearly parallel enhancement of the initial efficiency values was observed as a function of the top distributed Bragg reflector pair.en_US
dc.language.isoEnglishen_US
dc.source.titleConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOSen_US
dc.relation.isversionofhttp://doi.org/10.1109/LEOS.1999.811909en_US
dc.titleHigh-performance ITO-AlAs/GaAs based resonant cavity enhanced Schottky photodiodesen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage679en_US
dc.citation.epage680en_US
dc.citation.volumeNumber2en_US
dc.identifier.doi10.1109/LEOS.1999.811909en_US
dc.publisherIEEE, Piscataway, NJ, United Statesen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record