High-performance ITO-AlAs/GaAs based resonant cavity enhanced Schottky photodiodes
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
IEEE, Piscataway, NJ, United States
679 - 680
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/27844
The fabrication of ITO (indium tin oxide)-AlAs-based resonant cavity enhanced Schottky photodiodes was examined. The device structure was designed to achieve a low-loss cavity around a 840 nm optical communication window. The layers were grown by molecular beam epitaxy on a GaAs substrate. Photoresponse measurements were carried out in 750-900 nm wavelength range using a tungsten-halogen projection lamp as the light source and single pass monochromator. Although the discrepancy between the experiment and theory was quite large, a nearly parallel enhancement of the initial efficiency values was observed as a function of the top distributed Bragg reflector pair.