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      High-performance ITO-AlAs/GaAs based resonant cavity enhanced Schottky photodiodes

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      Author
      Özbay, Ekmel
      Bıyıklı, Necmi
      Kimukin, İbrahim
      Aytür, Orhan
      Date
      1999
      Source Title
      Proceedings of the LEOS’99 12th Annual Meeting: IEEE Lasers and Electro-Optics Society 1999 Annual Meeting
      Print ISSN
      1092-8081
      Publisher
      IEEE
      Pages
      679 - 680
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      The fabrication of ITO (indium tin oxide)-AlAs-based resonant cavity enhanced Schottky photodiodes was examined. The device structure was designed to achieve a low-loss cavity around a 840 nm optical communication window. The layers were grown by molecular beam epitaxy on a GaAs substrate. Photoresponse measurements were carried out in 750-900 nm wavelength range using a tungsten-halogen projection lamp as the light source and single pass monochromator. Although the discrepancy between the experiment and theory was quite large, a nearly parallel enhancement of the initial efficiency values was observed as a function of the top distributed Bragg reflector pair.
      Keywords
      Gallium arsenide
      Resonance
      Photodiodes
      Conducting materials
      Mirrors
      Permalink
      http://hdl.handle.net/11693/27844
      Published Version (Please cite this version)
      http://doi.org/10.1109/LEOS.1999.811909
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      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
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