Design considerations for MMIC distributed amplifiers
Date
1994
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Abstract
The bandwidth of the input artificial line in a distributed amplifier is the main band limiting factor. By choosing this impedance properly the bandwidth of a distributed amplifier can be maximized. A four section GaAs MESFET distributed amplifier is designed using this strategy. The fabricated MMIC amplifier gives satisfactory performance. By adding proper length of series transmission lines in the drain side, the gain and the gain flatness of the amplifier can be further improved. This fact is presented via simulation results. The superior gain potential of cascode connected FETs is also demonstrated.
Source Title
Proceedings of the 7th Mediterranean Electrotechnical Conference, MELECON 1994
Publisher
IEEE
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Amplification, Capacitors, Electric lines, Field effect transistors, MESFET devices, Monolithic integrated circuits, Numerical methods, Semiconducting gallium arsenide, Semiconductor device manufacture, Amplifier design guidelines, Artificial transmission lines, Band limiting factor, Distributed amplifiers, Microwave monolithic integrated circuits, Microwave amplifiers
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English