Design considerations for MMIC distributed amplifiers
Date
1994Source Title
Proceedings of the 7th Mediterranean Electrotechnical Conference, MELECON 1994
Publisher
IEEE
Pages
609 - 612
Language
English
Type
Conference PaperItem Usage Stats
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Show full item recordAbstract
The bandwidth of the input artificial line in a distributed amplifier is the main band limiting factor. By choosing this impedance properly the bandwidth of a distributed amplifier can be maximized. A four section GaAs MESFET distributed amplifier is designed using this strategy. The fabricated MMIC amplifier gives satisfactory performance. By adding proper length of series transmission lines in the drain side, the gain and the gain flatness of the amplifier can be further improved. This fact is presented via simulation results. The superior gain potential of cascode connected FETs is also demonstrated.
Keywords
AmplificationCapacitors
Electric lines
Field effect transistors
MESFET devices
Monolithic integrated circuits
Numerical methods
Semiconducting gallium arsenide
Semiconductor device manufacture
Amplifier design guidelines
Artificial transmission lines
Band limiting factor
Distributed amplifiers
Microwave monolithic integrated circuits
Microwave amplifiers