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dc.contributor.authorSerpengüzel, Alien_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorBek, Alpanen_US
dc.coverage.spatialSan Francisco, CA, USAen_US
dc.date.accessioned2016-02-08T11:59:38Z
dc.date.available2016-02-08T11:59:38Z
dc.date.issued1997en_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://hdl.handle.net/11693/27689
dc.descriptionDate of Conference: 10-13 November 1997en_US
dc.descriptionConference Name: 10th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1997en_US
dc.description.abstractA microcavity enhancement of room temperature photoluminescence (PL) of a hydrogenated amorphous silicon (a-Si:h) was performed. A quantum confinement model was developed to describe the occurrence of the PL in the bulk a-Si:H. According to the model, small a-Si clusters are in a matrix of a-Si:H. The regions with Si-H, having larger energy gaps due to strong Si-H bonds, isolate these clusters, and form barrier regions around them. The PL originates from these a-Si clusters.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of the 10th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1997en_US
dc.relation.isversionofhttps://doi.org/10.1109/LEOS.1997.630606en_US
dc.subjectCavity resonatorsen_US
dc.subjectChemical bondsen_US
dc.subjectChemical vapor depositionen_US
dc.subjectEnergy gapen_US
dc.subjectGolden_US
dc.subjectMathematical modelsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectPlasma applicationsen_US
dc.subjectQuantum theoryen_US
dc.subjectSemiconducting siliconen_US
dc.subjectPlasma enhanced chemical vapor deposition (PECVD)en_US
dc.subjectQuantum confinement modelen_US
dc.subjectAmorphous siliconen_US
dc.titleMicrocavity enhanced amorphous silicon photoluminescenceen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage243en_US
dc.citation.epage244en_US
dc.identifier.doi10.1109/LEOS.1997.630606en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorAydınlı, Atilla


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