High-speed resonant-cavity-enhanced Schottky photodiodes
Conference on Lasers and Electro-Optics Europe - Technical Digest
IEEE, Piscataway, NJ, United States
MetadataShow full item record
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/27687
The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. Fabrication started with formation of ohmic contacts to n+ layers. Mesa isolation was followed by a Ti-Au interconnect metallization. Following this, a semitransparent Au Schottky metal and a silicon nitride layer was deposited. Finally, a thick Ti-Au layer was deposited to form an air bridge connection between the interconnect and the Schottky metal. The optical properties of the photodiodes were simulated using a transfer matrix method.
- Conference Paper 2294