Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride
Author
Serpengüzel, A.
Aydinli, A.
Bek, A.
Date
1998Source Title
Proceedings of SPIE - The International Society for Optical Engineering
Print ISSN
0277786X
Volume
3283
Pages
252 - 259
Language
English
Type
Conference PaperItem Usage Stats
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Show full item recordAbstract
Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride - air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser. ©2003 Copyright SPIE - The International Society for Optical Engineering.
Keywords
Amorphous siliconFabry-Perot
Microcavity
Optoelectronics
Photoluminescence
Plasma enhanced chemical vapor deposition
Resonators
Spontaneous emission
Thin films
Ammonia
Amorphous films
Electrooptical devices
Emission spectroscopy
Fabry-Perot interferometers
Flat panel displays
Hydrogenation
Light emission
Light emitting diodes
Low pressure chemical vapor deposition
Luminescence
Microcavities
Mirrors
Nitrides
Nonmetals
Optoelectronic devices
Photoluminescence
Physical optics
Plasma deposition
Plasma enhanced chemical vapor deposition
Plasmas
Resonators
Semiconducting silicon compounds
Semiconductor quantum wells
Silicon nitride
Spontaneous emission
Thin films
Vapors
Absorbance
Back mirrors
Experimental spectrums
Fabry-Perot
Hydrogenated amorphous silicon nitrides
Microcavity
Microcavity effects
Optoelectronics
Resonant cavity enhanced
Silicon based
Amorphous silicon
Permalink
http://hdl.handle.net/11693/27665Published Version (Please cite this version)
http://dx.doi.org/10.1117/12.316689Collections
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