High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes
Christensen, D. H.
Ünlü, M. S.
Proceedings of the 11th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS 1998
157 - 158
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Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity Bragg mirrors made of quarter-wave Al0.20Ga0.80As/AlAs stacks. Photoresponse and photospectral measurements were carried out. The tuning of the resonance wavelength within the Bragg mirror's upper and lower edges was observed. Quantum efficiency greater than 90% was demonstrated.
Molecular beam epitaxy
Semiconducting aluminum compounds
Semiconducting gallium arsenide
Semiconductor device manufacture
Semiconductor device structures
Semiconductor device testing
Resonant cavity enhanced (RCE) photodiodes