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dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorKimukin, İbrahimen_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorGary, T.en_US
dc.coverage.spatialSan Jose, CA, United Statesen_US
dc.date.accessioned2016-02-08T11:58:38Zen_US
dc.date.available2016-02-08T11:58:38Zen_US
dc.date.issued2000en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11693/27643en_US
dc.descriptionDate of Conference: 20-26 January 2000en_US
dc.descriptionConference Name: Symposium on Integrated Optoelectronics, 2000en_US
dc.description.abstractHigh-speed photodetectors operating at 1.3 and 1.55 μm are important for long distance fiber optic based telecommunication applications. We fabricated GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism. Detectors using internal photoemission have usually very low quantum efficiency. We increased the quantum efficiency using resonant cavity enhancement effect. Resonant cavity enhancement effect also introduced wavelength selectivity which is very important for wavelength division multiplexing based communication systems. The top-illuminated Schottky photodiodes were fabricated by a microwave-compatible monolithic microfabrication process. The top metal layer serves as the top mirror of the Fabry-Perot cavity. Bottom mirror is composed of 15 pair AlAs/GaAs distributed Bragg reflector. We have used transfer matrix method to simulate the optical properties of the photodiodes. Our room temperature quantum efficiency measurement and simulation of our photodiodes at zero bias show that, we have achieved 9 fold enhancement in the quantum efficiency, with respect to a similar photodetector without a cavity. We also investigated the effect of reverse bias on quantum efficiency. Our devices are RC time constant limited with a predicted 3-dB bandwidth of 70 GHz.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of SPIE Vol. 3948, Photodetectors: Materials and Devices Ven_US
dc.relation.isversionofhttps://doi.org/10.1117/12.382116en_US
dc.subjectPhotodetectoren_US
dc.subjectInternal-photoemissionen_US
dc.subjectRCE effecten_US
dc.subjectInfrareden_US
dc.subjectPhotoemissionen_US
dc.subjectFiber communicationen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectWavelength division multiplexingen_US
dc.titleHigh-speed GaAs-based resonant-cavity-enhanced 1.3-μm photodetectoren_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage170en_US
dc.citation.epage178en_US
dc.citation.volumeNumber3948en_US
dc.identifier.doi10.1117/12.382116en_US
dc.publisherSPIEen_US
dc.contributor.bilkentauthorBıyıklı, Necmi


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