Structural and loss characterization of SiON layers for optical waveguide applications
Proceedings of the 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000
760 - 761
Item Usage Stats
Silicon oxynitride films for optical waveguide applications were grown at 350°C in a PECVD reactor. ATR-FTIR spectroscopy was used to identify the bond structure and absorption characteristics in the mid-infrared region. Annealing of the films was performed together with close monitoring of the N-H bond at 3400 cm-1 and correlated with optical loss measurements. The possibility of a new method for the reduction of the N-H bonds without annealing is discussed.
Fourier transform infrared spectroscopy
Optical variables measurement
Plasma enhanced chemical vapor deposition
Optical loss measurement
Silicon oxynitride film
Published Version (Please cite this version)https://doi.org/10.1109/LEOS.2000.894076
Showing items related by title, author, creator and subject.
Akar, N.; Gunalay, Y. (Elsevier, 2013)Optical buffering based on fiber delay lines (FDLs) has been proposed as a means for contention resolution in an optical packet switch. In this article, we propose a queuing model for feedback-type shared-per-node recirculating ...
Volpe, G.; Volpe, Giovanni; Gigan, S. (SPIE, 2014)Optical tweezers have been widely used in physics, chemistry and biology to manipulate and trap microscopic and nanoscopic objects. Current optical trapping techniques rely on carefully engineered setups to manipulate ...
Olcum, Selim; Karademir, Ertuğrul; Taş. Vahdettin; Akça, İmran; Kocabaş, Aşkın; Atalar, Abdullah; Aydınlı, Aydınlı (IEEE, 2009-06)In this paper, we have fabricated an optical cantilever with an integrated grating coupler. We have used an inexpensive and repeatable method for integrating the grating to the silicon cantilever with a microfabrication ...