Structural and loss characterization of SiON layers for optical waveguide applications
Proceedings of the 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000
760 - 761
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Silicon oxynitride films for optical waveguide applications were grown at 350°C in a PECVD reactor. ATR-FTIR spectroscopy was used to identify the bond structure and absorption characteristics in the mid-infrared region. Annealing of the films was performed together with close monitoring of the N-H bond at 3400 cm-1 and correlated with optical loss measurements. The possibility of a new method for the reduction of the N-H bonds without annealing is discussed.
Fourier transform infrared spectroscopy
Optical variables measurement
Plasma enhanced chemical vapor deposition
Optical loss measurement
Silicon oxynitride film
Published Version (Please cite this version)https://doi.org/10.1109/LEOS.2000.894076
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