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      High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector

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      Author
      Kimukin, İbrahim
      Özbay, Ekmel
      Bıyıklı, Necmi
      Kartaloğlu, Tolga
      Aytür, Orhan
      Tuttle, G.
      Date
      2000
      Source Title
      Proceedings of the 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000
      Print ISSN
      1092-8081
      Publisher
      IEEE
      Pages
      108 - 109
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      Resonant cavity enhanced (RCE) photodetectors offer the possibility of overcoming the low quantum efficiency limitation of conventional photodetectors. The RCE detectors are based on the enhancement of the optical field within a Fabry-Perot resonator. The increased field allows the use of a thin absorbing layer, which minimizes the transit time of the photogenerated carriers without hampering the quantum efficiency. Recently, we fabricated high-speed RCE p-i-n and Schottky photodetectors, where a 90% quantum efficiency along with a 3-dB bandwidth of 50 GHz has been reported. We used the transfer matrix method to design the epilayer structure and to simulate the optical properties of the photodiode. The samples were fabricated by a microwave-compatible process and high-speed measurements were made with an optical parametric oscillator.
      Keywords
      Avalanche diodes
      Bandwidth
      Computer simulation
      Fourier transforms
      Optical communication
      Photoemission
      Quantum efficiency
      Schottky barrier diodes
      Semiconducting gallium arsenide
      Fabry-Perot resonators
      Internal photoemission
      Laser timing jitter
      Quantum efficiency measurement
      Resonant cavity enhanced photodetector
      Photodetectors
      Permalink
      http://hdl.handle.net/11693/27628
      Published Version (Please cite this version)
      https://doi.org/10.1109/LEOS.2000.890697
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
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