High-speed 1.3 μm GaAs internal photoemission resonant cavity enhanced photodetector
Author
Kimukin, İbrahim
Özbay, Ekmel
Bıyıklı, Necmi
Kartaloğlu, Tolga
Aytür, Orhan
Tuttle, G.
Date
2000Source Title
Proceedings of the 13th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2000
Print ISSN
1092-8081
Publisher
IEEE
Pages
108 - 109
Language
English
Type
Conference PaperItem Usage Stats
140
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Abstract
Resonant cavity enhanced (RCE) photodetectors offer the possibility of overcoming the low quantum efficiency limitation of conventional photodetectors. The RCE detectors are based on the enhancement of the optical field within a Fabry-Perot resonator. The increased field allows the use of a thin absorbing layer, which minimizes the transit time of the photogenerated carriers without hampering the quantum efficiency. Recently, we fabricated high-speed RCE p-i-n and Schottky photodetectors, where a 90% quantum efficiency along with a 3-dB bandwidth of 50 GHz has been reported. We used the transfer matrix method to design the epilayer structure and to simulate the optical properties of the photodiode. The samples were fabricated by a microwave-compatible process and high-speed measurements were made with an optical parametric oscillator.
Keywords
Avalanche diodesBandwidth
Computer simulation
Fourier transforms
Optical communication
Photoemission
Quantum efficiency
Schottky barrier diodes
Semiconducting gallium arsenide
Fabry-Perot resonators
Internal photoemission
Laser timing jitter
Quantum efficiency measurement
Resonant cavity enhanced photodetector
Photodetectors