Strong enhancement of spontaneous emission in hydrogenated amorphous silicon nitride coupled-microcavity structures
Conference on Lasers and Electro-Optics Europe - Technical Digest
176 - 177
MetadataShow full item record
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/27606
The modification of spontaneous emission from the hydrogenated amorphous silicon nitride layers in a coupled-microcavity (CMC) structure was investigated. The CMC structure was composed of alternating silicon-oxide and silicon-nitride multilayers. The results showed that the strong enhancement of spontaneous emisssion can be achieved throughout the cavity band.