Strong enhancement of spontaneous emission in hydrogenated amorphous silicon nitride coupled-microcavity structures

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Strong enhancement of spontaneous emission in hydrogenated amorphous silicon nitride coupled-microcavity structures.pdf (410.38 KB)

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2001

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Abstract

The modification of spontaneous emission from the hydrogenated amorphous silicon nitride layers in a coupled-microcavity (CMC) structure was investigated. The CMC structure was composed of alternating silicon-oxide and silicon-nitride multilayers. The results showed that the strong enhancement of spontaneous emisssion can be achieved throughout the cavity band.

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Proceedings of the Conference on Lasers and Electro-Optics, CLEO 2001

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IEEE

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Keywords

Coupled-microcavity (CMC) structures, Amorphous materials, Energy gap, Light emitting diodes, Monochromators, Photoluminescence, Photomultipliers, Photons, Plasma enhanced chemical vapor deposition, Spontaneous emission, Substrates, Silicon nitride

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http://hdl.handle.net/11693/27606

Published Version (Please cite this version)

https://doi.org/10.1109/CLEO.2001.947675

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Scholarly Publications - Physics

Language

English

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Conference Paper