High-speed InGaAs based resonant cavity enhanced p-i-n photodiodes
Author
Kimukin, İbrahim
Bıyıklı, Necmi
Özbay, Ekmel
Date
2001Source Title
Proceedings of the 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2001
Print ISSN
1092-8081
Publisher
IEEE
Pages
889 - 890
Language
English
Type
Conference PaperItem Usage Stats
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Abstract
High-speed InGaAs based resonant cavity enhanced photodiodes were discussed. The responses of the photodiodes was measured under high incident optical powers. Bandwidth-efficiency (BWE) product was used to measure the performance of the photodiode. Transfer matrix method was used to design the epilayer structure and to simulate the optical properties of the photodiode. Photo response measurements were carried out in 1450 nm to 1700 nm range using a tungsten-halogen projection lamp as the light source and a single pass monochromator. The deconvolved Fourier transform of the data was found to have a bandwidth of 31 GHz under conditions of 40 GHz limit.
Keywords
BandwidthCavity resonators
Computer simulation
Fiber lasers
Fourier transforms
Laser pulses
Molecular beam epitaxy
Photocurrents
Quantum efficiency
Semiconducting indium gallium arsenide
Photo response measurements
Transfer matrix methods
Photodiodes