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dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKimukin, İbrahimen_US
dc.contributor.authorKartaloğlu, Tolgaen_US
dc.contributor.authorAytür, Orhanen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialSan Jose, California, United Statesen_US
dc.date.accessioned2016-02-08T11:57:12Zen_US
dc.date.available2016-02-08T11:57:12Zen_US
dc.date.issued2002en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11693/27587en_US
dc.descriptionDate of Conference: 19-25 January 2002en_US
dc.descriptionConference Name: Symposium on Integrated Optoelectronic Devices, 2002en_US
dc.description.abstractIn this paper we present our efforts on the design, fabrication and characterization of high-speed, visible-blind, GaN-based ultra-violet (UV) photodiodes using indium-tin-oxide (ITO) Schottky contacts. ITO is known as a transparent conducting material for the visible and near infrared part of the electromagnetic spectrum. We have investigated the optical properties of thin ITO films in the ultraviolet spectrum The transmission and reflection measurements showed that thin ITO films had better transparencies than thin Au films for wavelengths greater than 280 mn. Using a microwave compatible fabrication process, we have fabricated Au and ITO based Schottky photediodes on n-/n+ GaN epitaxial layers. We have made current-voltage (I-V), spectral quantum efficiency, and high-speed characterization of the fabricated devices. I-V characterization showed us that the Au-Schottky samples had better electrical characteristics mainly due to the larger Schottky barrier. However, due to the better optical transparency, ITO-Schottky devices exhibited higher quantum efficiencies compared to Au-Schottky devices. ITO-Schottky photodiodes with ∼80 nm thick ITO films resulted in a maximum quantum efficiency of 47%, whereas Au-Schottky photodiode samples with ∼10 nm thick Au films displayed a maximum efficiency of 27% in the visible-blind spectrum. UV/visible rejection ratios over three orders of magnitude were obtained for both samples. High-frequency characterization of the devices was performed via pulse-response measurements at 360 nm. ITO-Schottky photodiodes showed excellent high-speed characteristics with rise times as small as 12 psec and RC-time constant limited pulse-widths of 60 psec.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of SPIE Vol. 4650, Photodetector Materials and Devices VIIen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.467678en_US
dc.subjectGaNen_US
dc.subjectHigh-speeden_US
dc.subjectIndium-tin-oxideen_US
dc.subjectPhotodiodeen_US
dc.subjectQuantum efficiencyen_US
dc.subjectSchottkyen_US
dc.subjectUltravioleten_US
dc.subjectVisible-blinden_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectGallium nitrideen_US
dc.titleHigh-speed visible-blind GaN-based ITO-Schottky photodiodesen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage75en_US
dc.citation.epage83en_US
dc.citation.volumeNumber4650en_US
dc.identifier.doi10.1117/12.467678en_US
dc.publisherSPIEen_US
dc.contributor.bilkentauthorBıyıklı, Necmi


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