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dc.contributor.authorBiyikli, N.en_US
dc.contributor.authorKimukin I.en_US
dc.contributor.authorKartaloglu, T.en_US
dc.contributor.authorAytur O.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T11:57:12Z
dc.date.available2016-02-08T11:57:12Z
dc.date.issued2002en_US
dc.identifier.issn0277786X
dc.identifier.urihttp://hdl.handle.net/11693/27587
dc.description.abstractIn this paper we present our efforts on the design, fabrication and characterization of high-speed, visible-blind, GaN-based ultra-violet (UV) photodiodes using indium-tin-oxide (ITO) Schottky contacts. ITO is known as a transparent conducting material for the visible and near infrared part of the electromagnetic spectrum. We have investigated the optical properties of thin ITO films in the ultraviolet spectrum The transmission and reflection measurements showed that thin ITO films had better transparencies than thin Au films for wavelengths greater than 280 mn. Using a microwave compatible fabrication process, we have fabricated Au and ITO based Schottky photediodes on n-/n+ GaN epitaxial layers. We have made current-voltage (I-V), spectral quantum efficiency, and high-speed characterization of the fabricated devices. I-V characterization showed us that the Au-Schottky samples had better electrical characteristics mainly due to the larger Schottky barrier. However, due to the better optical transparency, ITO-Schottky devices exhibited higher quantum efficiencies compared to Au-Schottky devices. ITO-Schottky photodiodes with ∼80 nm thick ITO films resulted in a maximum quantum efficiency of 47%, whereas Au-Schottky photodiode samples with ∼10 nm thick Au films displayed a maximum efficiency of 27% in the visible-blind spectrum. UV/visible rejection ratios over three orders of magnitude were obtained for both samples. High-frequency characterization of the devices was performed via pulse-response measurements at 360 nm. ITO-Schottky photodiodes showed excellent high-speed characteristics with rise times as small as 12 psec and RC-time constant limited pulse-widths of 60 psec.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.467678en_US
dc.subjectGaNen_US
dc.subjectHigh-speeden_US
dc.subjectIndium-tin-oxideen_US
dc.subjectPhotodiodeen_US
dc.subjectQuantum efficiencyen_US
dc.subjectSchottkyen_US
dc.subjectUltravioleten_US
dc.subjectVisible-blinden_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectGallium nitrideen_US
dc.subjectQuantum efficiencyen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting indium compoundsen_US
dc.subjectThin filmsen_US
dc.subjectUltraviolet devicesen_US
dc.subjectSchottky photodiodesen_US
dc.subjectPhotodiodesen_US
dc.titleHigh-speed visible-blind GaN-based ITO-Schottky photodiodesen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.spage75en_US
dc.citation.epage83en_US
dc.citation.volumeNumber4650en_US
dc.identifier.doi10.1117/12.467678en_US
dc.contributor.bilkentauthorÖzbay, Ekmelen_US


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