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      High-speed solar-blind AlGaN-based metal-semiconductor-metal photodetectors

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      Author
      Bıyıklı, Necmi
      Kimukin, İbrahim
      Kartaloğlu, Tolga
      Aytür, Orhan
      Özbay, Ekmel
      Date
      2003
      Source Title
      Physica Status Solidi (C) Special Issue: 5th International Conference on Nitride Semiconductors (ICNS‐5)
      Print ISSN
      1610-1634
      Publisher
      Wiley
      Pages
      2314 - 2317
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      Solar-blind AlGaN metal-semiconductor-metal (MSM) photodetectors with fast pulse response have been demonstrated. The devices were fabricated on MOCVD-grown epitaxial Al0.38Ga0.62N layers, using a microwave compatible fabrication process. The photodiode samples exhibited low leakage with dark current densities below 1 × 10-6 A/cm 2 at 40 V reverse bias. Photoconductive gain-assisted photoresponse was observed with a peak responsivity of 1.26 A/W at 264 nm. A visible rejection of ∼3 orders of magnitude at 350 nm was demonstrated. Temporal high-speed measurements at 267 nm resulted in fast pulse responses with 3-dB bandwidths as high as 5.4 GHz. This corresponds to a record high-speed performance for solar-blind detectors. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA.
      Keywords
      Fabrication process
      High speed measurements
      High-speed performance
      Metal semiconductor metal photodetector
      Orders of magnitude
      Peak responsivity
      Photoresponses
      Solar-blind detectors
      Bandwidth
      Nitrides
      Photons
      Photodetectors
      Permalink
      http://hdl.handle.net/11693/27489
      Published Version (Please cite this version)
      http://dx.doi.org/10.1002/pssc.200303518
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      • Nanotechnology Research Center (NANOTAM) 1006
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