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dc.contributor.authorBiyikli, N.en_US
dc.contributor.authorKimukin I.en_US
dc.contributor.authorKartaloglu, T.en_US
dc.contributor.authorAytür O.en_US
dc.contributor.authorOzbay, E.en_US
dc.date.accessioned2016-02-08T11:54:35Z
dc.date.available2016-02-08T11:54:35Z
dc.date.issued2003en_US
dc.identifier.issn0272-9172
dc.identifier.urihttp://hdl.handle.net/11693/27481
dc.description.abstractWe report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave compatible fabrication process. Schottky photodiodes with Au and indium-tin-oxide (ITO) Schottky contacts were fabricated. Current-voltage, spectral responsivity, and high-speed measurements were performed. Both Schottky samples exhibited very low sub-pA dark currents at high reverse bias. A bias dependent spectral responsivity was observed with a peak responsivity of 89 mA/W at 267 nm, and 44 mA/W at 263 nm for Au and ITO-Schottky devices respectively. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 ps and 74 ps respectively. The fastest solar-blind detector had a record 3-dB bandwidth of 1.10 GHz.en_US
dc.language.isoEnglishen_US
dc.source.titleMaterials Research Society Symposium - Proceedingsen_US
dc.subjectAluminum compoundsen_US
dc.subjectCrystal structureen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectEpitaxial growthen_US
dc.subjectHeterojunctionsen_US
dc.subjectMicrowavesen_US
dc.subjectPhotodetectorsen_US
dc.subjectReactive ion etchingen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectDark currentsen_US
dc.subjectReverse biasen_US
dc.subjectSolar-blind operationen_US
dc.subjectSpectral responsibilityen_US
dc.subjectPhotodiodesen_US
dc.titleHigh-Speed Solar-Blind AlGaN Schottky Photodiodesen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.spage355en_US
dc.citation.epage360en_US
dc.citation.volumeNumber764en_US


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