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      High-speed solar-blind AlGaN Schottky photodiodes

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      Author(s)
      Bıyıklı, Necmi
      Kimukin, İbrahim
      Kartaloğlu, Tolga
      Aytür, Orhan
      Özbay, Ekmel
      Date
      2003
      Source Title
      Proceedings of the Materials Research Society Symposium, MRS 2003
      Print ISSN
      0272-9172
      Publisher
      Cambridge University Press
      Volume
      764
      Pages
      355 - 360
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      94
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      Abstract
      We report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave compatible fabrication process. Schottky photodiodes with Au and indium-tin-oxide (ITO) Schottky contacts were fabricated. Current-voltage, spectral responsivity, and high-speed measurements were performed. Both Schottky samples exhibited very low sub-pA dark currents at high reverse bias. A bias dependent spectral responsivity was observed with a peak responsivity of 89 mA/W at 267 nm, and 44 mA/W at 263 nm for Au and ITO-Schottky devices respectively. Time-based high-frequency measurements at 267 nm resulted in pulse responses with rise times and pulse-widths as short as 13 ps and 74 ps respectively. The fastest solar-blind detector had a record 3-dB bandwidth of 1.10 GHz.
      Keywords
      Aluminum compounds
      Crystal structure
      Current voltage characteristics
      Epitaxial growth
      Heterojunctions
      Microwaves
      Photodetectors
      Reactive ion etching
      Schottky barrier diodes
      Dark currents
      Reverse bias
      Solar-blind operation
      Spectral responsibility
      Photodiodes
      Permalink
      http://hdl.handle.net/11693/27481
      Published Version (Please cite this version)
      https://doi.org/10.1557/PROC-764-C5.8
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Department of Physics 2397
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