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      • Department of Electrical and Electronics Engineering
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      High-performance ALGaN-based visible-blind resonant cavity enhanced Schottky photodiodes

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      Author(s)
      Kimukin, İbrahim
      Bıyıklı, Necmi
      Kartaloğlu, Tolga
      Aytür, Orhan
      Özbay, Ekmel
      Date
      2003-04
      Source Title
      Materials Research Society Symposium - Proceedings
      Print ISSN
      0272-9172
      Publisher
      Materials Research Society
      Pages
      159 - 164
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.
      Keywords
      Bandwidth
      Cavity resonators
      Energy gap
      Gallium nitride
      Indium compounds
      Mirrors
      Refractive index
      Schottky barrier diodes
      Semiconducting aluminum compounds
      Thin films
      Ultraviolet detectors
      Fast pulse responses
      Reflectivity measurements
      Resonant peaks
      Photodiodes
      Permalink
      http://hdl.handle.net/11693/27480
      Published Version (Please cite this version)
      https://doi.org/10.1557/PROC-764-C3.22
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Department of Physics 2397
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