High-performance ALGaN-based visible-blind resonant cavity enhanced Schottky photodiodes
Date
2003-04Source Title
Materials Research Society Symposium - Proceedings
Print ISSN
0272-9172
Publisher
Materials Research Society
Pages
159 - 164
Language
English
Type
Conference PaperItem Usage Stats
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Abstract
We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.
Keywords
BandwidthCavity resonators
Energy gap
Gallium nitride
Indium compounds
Mirrors
Refractive index
Schottky barrier diodes
Semiconducting aluminum compounds
Thin films
Ultraviolet detectors
Fast pulse responses
Reflectivity measurements
Resonant peaks
Photodiodes