Gunn oscillations in GaN channels
Author
Sevik, Cem
Bulutay, Ceyhun
Date
2004Source Title
Semiconductor Science and Technology
Print ISSN
0268-1242
Publisher
IOP
Volume
19
Issue
4
Pages
188 - 190
Language
English
Type
Conference PaperItem Usage Stats
127
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97
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Abstract
Gallium nitride with its high negative differential mobility threshold is an appealing material for high power millimetre-wave oscillators as a Gunn diode. By means of extensive ensemble Monte Carlo simulations, the dynamics of large-amplitude Gunn domain oscillations from 120 GHz to 650 GHz is studied in detail. Their operations are checked under both impressed single-tone sinusoidal bias and external tank circuit conditions. The width of the doping notch is observed to enhance higher harmonic efficiency at the expense of the fundamental frequency up to a critical value, beyond which sustained Gunn oscillations cease. The degeneracy effects due to the Pauli exclusion principle are also considered, but their effects are seen to be negligible within the realistic bounds of the Gunn diode operation.
Keywords
Computer simulationElectric potential
Gunn diodes
Gunn oscillators
Impact ionization
Monte Carlo methods
Natural frequencies
Semiconductor doping
Pauli exclusion principle
Gallium nitride