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      Gunn oscillations in GaN channels

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      Author
      Sevik, Cem
      Bulutay, Ceyhun
      Date
      2004
      Source Title
      Semiconductor Science and Technology
      Print ISSN
      0268-1242
      Publisher
      IOP
      Volume
      19
      Issue
      4
      Pages
      188 - 190
      Language
      English
      Type
      Conference Paper
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      Abstract
      Gallium nitride with its high negative differential mobility threshold is an appealing material for high power millimetre-wave oscillators as a Gunn diode. By means of extensive ensemble Monte Carlo simulations, the dynamics of large-amplitude Gunn domain oscillations from 120 GHz to 650 GHz is studied in detail. Their operations are checked under both impressed single-tone sinusoidal bias and external tank circuit conditions. The width of the doping notch is observed to enhance higher harmonic efficiency at the expense of the fundamental frequency up to a critical value, beyond which sustained Gunn oscillations cease. The degeneracy effects due to the Pauli exclusion principle are also considered, but their effects are seen to be negligible within the realistic bounds of the Gunn diode operation.
      Keywords
      Computer simulation
      Electric potential
      Gunn diodes
      Gunn oscillators
      Impact ionization
      Monte Carlo methods
      Natural frequencies
      Semiconductor doping
      Pauli exclusion principle
      Gallium nitride
      Permalink
      http://hdl.handle.net/11693/27461
      Published Version (Please cite this version)
      http://dx.doi.org/10.1088/0268-1242/19/4/065
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      • Department of Physics 2299
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