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      Analysis of electrical characteristics and magnetic field dependences of YBCO step edge and bicrystal grain boundary junctions for rf-SQUID applications

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      Author
      Fardmanesh, M.
      Schubert, J.
      Akram, R.
      Bick, M.
      Banzet, M.
      Zander, W.
      Zhang, Y.
      Krause, H-J.
      Date
      2004
      Source Title
      Superconductor Science and Technology
      Print ISSN
      0953-2048
      Publisher
      Institute of Physics
      Volume
      17
      Issue
      5
      Pages
      S375 - S380
      Language
      English
      Type
      Article
      Item Usage Stats
      118
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      111
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      Abstract
      The dc characteristics and magnetic field dependences of Y-Ba-Cu-O bicrystal grain boundary junctions (BGBJs) and step edge junctions (SEJs) were investigated for fabrication of rf-SQUIDs. Test junctions with up to 8 μm widths as well as the junctions of the two types of junction-based rf-SQUID were studied. The SEJs typically showed lower Jc and higher ρN as compared to the BGBJs, resulting in close IcRN products. All the BGBJs showed classical field dependent Ic following their junction width, resembling Fraunhofer patterns. The field sensitivity of the BGBJs' Uc led to low yield submicron BGBJ rf-SQUIDs partially impaired by the Earth's magnetic field. Two major behaviours of low and high field dependences of Ic were observed for the SEJs. Only the low field-sensitive SEJs resulted in micron size junction rf-SQUIDs not impaired by the Earth's magnetic field. The low field-sensitive SEJs led to low I/f noise magnetically stable rf-SQUIDs appropriate for applications in unshielded environments at 77 K.
      Keywords
      Crystal microstructure
      Crystals
      Electric potential
      Etching
      Grain boundaries
      Ion beams
      Magnetic field effects
      Magnetometers
      SQUIDs
      Strontium compounds
      Titanium oxides
      Yttrium barium copper oxides
      Combinatorial ion beam etching (CIBE)
      Junction parameters
      Step edge junctions (SEJ)
      Voltage transfer
      Josephson junction devices
      Permalink
      http://hdl.handle.net/11693/27459
      Published Version (Please cite this version)
      http://dx.doi.org/10.1088/0953-2048/17/5/057
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      • Department of Electrical and Electronics Engineering 3524
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