Show simple item record

dc.contributor.authorSandhu, A.en_US
dc.contributor.authorOkamoto, A.en_US
dc.contributor.authorShibasaki, I.en_US
dc.contributor.authorOral, Ahmeten_US
dc.coverage.spatialCambridge, UKen_US
dc.date.accessioned2016-02-08T11:54:01Zen_US
dc.date.available2016-02-08T11:54:01Zen_US
dc.date.issued2004en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://hdl.handle.net/11693/27458en_US
dc.descriptionDate of Conference: 22-25 September 2003en_US
dc.descriptionConference Name: Micro and Nano Engineering, MNE 2003en_US
dc.description.abstractGaAs/AlGaAs two-dimensional electron gas (GaAs-2DEG) Hall probes are impractical for sub-micron room-temperature scanning Hall microscopy (RT-SHPM), due to surface depletion effects that limit the Hall driving current and magnetic sensitivity (Bmin). Nano and micro Hall-effect sensors were fabricated using Bi and InSb thin films and shown to be practical alternatives to GaAs-2DEG probes for high resolution RT-SHPM. The GaAs-2DEG and InSb probes were fabricated using photolithography and the Bi probes by optical and focused ion beam lithography. Surface depletion effects limited the minimum feature size of GaAs-2DEG probes to ∼1.5 μm2 with a maximum drive current Imax of ∼3 μA and Bmin∼0.2 G/Hz. The B min of 1.5 μm2 InSb Hall probes was 6×10 -3 G/Hz at Imax of 100 μA. Further, 200 nm×200 nm Bi probes yielded good RT-SHPM images of garnet films, with Imax and sensitivity of 40 μA and ∼0.80 G/Hz, respectively.en_US
dc.language.isoEnglishen_US
dc.source.titleMicroelectronic Engineeringen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.mee.2004.03.029en_US
dc.subjectFerromagnetic domainsen_US
dc.subjectHall-effect sensorsen_US
dc.subjectMagnetic imagingen_US
dc.subjectScanning Hall probe microscopyen_US
dc.subjectApproximation theoryen_US
dc.subjectBandwidthen_US
dc.subjectElectron gasen_US
dc.subjectFerromagnetismen_US
dc.titleNano and micro Hall-effect sensors for room-temperature scanning hall probe microscopyen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage524en_US
dc.citation.epage528en_US
dc.citation.volumeNumber73-74en_US
dc.identifier.doi10.1016/j.mee.2004.03.029en_US
dc.publisherElsevieren_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record