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      Investigation of AlGaN buffer layers on sapphire grown by MOVPE

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      Author(s)
      Van Gemmern, P.
      Dikme, Y.
      Bıyıklı, Necmi
      Kalisch, H.
      Özbay, Ekmel
      Jansen, R. H.
      Heuken, M.
      Date
      2004
      Source Title
      Proceedings of SPIE Vol. 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
      Print ISSN
      0277-786X
      Publisher
      SPIE
      Volume
      5366
      Pages
      183 - 190
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      In this work, AlGaN layers were grown on sapphire by metal-organic vapor phase epitaxy (MOVPE) on (0001)-oriented sapphire substrates, with the intention to investigate the effect of varying Al/MO and V/III ratios on the Al incorporation into the AlGaN layers. The parameters Al/MO and V/III describe the proportions of source material inside the reactor. With the help of optical transmission measurements, characteristic cut-off wavelengths of the Al xGa(1-x)N layers were determined. These wavelengths were used to calculate the Al content x of the layers, leading to values between 26.6% and 52.1%. Using the two process parameters Al/MO and V/III as input and the Al content of the AlGaN layers as a response variable, the experimental results were further investigated with the help of the software STATGRAPHICS. An estimated response surface for the variable x was generated. It was found that the Al incorporation is only tunable within a wide range for high V/III ratios of about 900. For constant Al/MO ratios and varying V/III ratios, two different growth characteristics were observed at high and low Al/MO values. This behavior is ascribed to the superposition of two oppositional effects.
      Keywords
      Al/MO ratio
      AlGaN
      MOVPE
      Sapphire
      V/III ratio
      Electric breakdown
      Electric reactors
      Light transmission
      Metallorganic vapor phase epitaxy
      Optical fibers
      Optoelectronic devices
      Photoconducting materials
      Permalink
      http://hdl.handle.net/11693/27453
      Published Version (Please cite this version)
      http://dx.doi.org/10.1117/12.529952
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      • Department of Physics 2397
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