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dc.contributor.authorSayan, S.en_US
dc.contributor.authorBartynski, R.A.en_US
dc.contributor.authorRobertson J.en_US
dc.contributor.authorSuehle J.S.en_US
dc.contributor.authorVogel, E.en_US
dc.contributor.authorNguyen, N.V.en_US
dc.contributor.authorEhrstein J.en_US
dc.contributor.authorKopanski J.J.en_US
dc.contributor.authorSuzer, S.en_US
dc.contributor.authorHoll, M.B.en_US
dc.contributor.authorGarfunkel, E.en_US
dc.date.accessioned2016-02-08T11:53:33Z
dc.date.available2016-02-08T11:53:33Z
dc.date.issued2004en_US
dc.identifier.urihttp://hdl.handle.net/11693/27442
dc.description.abstractWe have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings - Electrochemical Societyen_US
dc.subjectBand alignmentsen_US
dc.subjectDielectric stacksen_US
dc.subjectPhotoemission spectroscopyen_US
dc.subjectWork functionsen_US
dc.subjectCMOS integrated circuitsen_US
dc.subjectElectric insulatorsen_US
dc.subjectFermi levelen_US
dc.subjectGates (transistor)en_US
dc.subjectHafnium compoundsen_US
dc.subjectMultilayersen_US
dc.subjectPhotoemissionen_US
dc.subjectThermodynamic stabilityen_US
dc.subjectThreshold voltageen_US
dc.subjectDielectric materialsen_US
dc.titleBand alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systemsen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Chemistry
dc.citation.spage255en_US
dc.citation.epage263en_US
dc.citation.volumeNumber1en_US


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