Band alignment issues in metal/dielectric stacks: a combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems

Files

bilkent-research-paper.pdf (68.58 KB)

Date

2004

Authors

Sayan, S.
Bartynski, R.A.
Robertson J.
Suehle, J. S.
Vogel, E.
Nguyen, N. V.
Ehrstein, J.
Kopanski, J. J.
Süzer, Şefik
Holl, M. B.

Editor(s)

Advisor

Supervisor

Co-Advisor

Co-Supervisor

Instructor

BUIR Usage Stats
3
views
19
downloads

  • Share

Series

Abstract

We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.

Source Title

Proceedings of the International Symposium on Advanced Short-time Thermal Processing for Si-based CMOS Devices II

Publisher

Electrochemical Society

Course

Other identifiers

Book Title

Keywords

Band alignments, Dielectric stacks, Photoemission spectroscopy, Work functions, CMOS integrated circuits, Electric insulators, Fermi level, Gates (transistor), Hafnium compounds, Multilayers, Photoemission, Thermodynamic stability, Threshold voltage, Dielectric materials

Degree Discipline

Degree Level

Degree Name

Citation

Permalink

http://hdl.handle.net/11693/27442

Published Version (Please cite this version)

Collections

Scholarly Publications - Chemistry

Language

English

Type

Conference Paper