Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems

Thumbnail
View/Open
Date Issued
2004
Author
Sayan, S.
Bartynski, R.A.
Robertson J.
Suehle J.S.
Vogel, E.
Nguyen, N.V.
Ehrstein J.
Kopanski J.J.
Suzer, S.
Holl, M.B.
Garfunkel, E.
Show full item record
Please cite this item using this persistent URL
http://hdl.handle.net/11693/27442
Journal
Proceedings - Electrochemical Society
Collections
Abstract
We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.