Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems

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Author
Sayan, S.
Bartynski, R.A.
Robertson J.
Suehle J.S.
Vogel, E.
Nguyen, N.V.
Ehrstein J.
Kopanski J.J.
Suzer, S.
Holl, M.B.
Garfunkel, E.
Date
2004
Journal Title
Proceedings - Electrochemical Society
Volume
1
Pages
255 - 263
Language
English
Type
Conference Paper
Metadata
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http://hdl.handle.net/11693/27442
Abstract
We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.
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