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      Band alignment issues in metal/dielectric stacks: a combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems

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      Author(s)
      Sayan, S.
      Bartynski, R.A.
      Robertson J.
      Suehle, J. S.
      Vogel, E.
      Nguyen, N. V.
      Ehrstein, J.
      Kopanski, J. J.
      Süzer, Şefik
      Holl, M. B.
      Garfunkel, E.
      Date
      2004
      Source Title
      Proceedings of the International Symposium on Advanced Short-time Thermal Processing for Si-based CMOS Devices II
      Publisher
      Electrochemical Society
      Volume
      1
      Pages
      255 - 263
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.
      Keywords
      Band alignments
      Dielectric stacks
      Photoemission spectroscopy
      Work functions
      CMOS integrated circuits
      Electric insulators
      Fermi level
      Gates (transistor)
      Hafnium compounds
      Multilayers
      Photoemission
      Thermodynamic stability
      Threshold voltage
      Dielectric materials
      Permalink
      http://hdl.handle.net/11693/27442
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      • Department of Chemistry 640
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