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      Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier

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      Author
      Schwindt, R.S.
      Kumar V.
      Aktas O.
      Lee J.-W.
      Adesida I.
      Date
      2004
      Journal Title
      Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
      Print ISSN
      15508781
      Pages
      201 - 203
      Language
      English
      Type
      Conference Paper
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      Please cite this item using this persistent URL
      http://hdl.handle.net/11693/27439
      Abstract
      The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C. © 2004 IEEE.
      Published as
      http://dx.doi.org/10.1109/CSICS.2004.1392536
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