Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier
Date
2004-10
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Abstract
The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C. © 2004 IEEE.
Source Title
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Publisher
IEEE
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Keywords
Amplifier, Gallium nitride, GaN, HEMT, Low noise, MMIC, SiC, Wide bandgap, Low noise amplifier (LNA), Ohmic metal, Spiral inductors, Wide bandgap, Amplifiers (electronic), Electron mobility, Gallium nitride, Monolithic microwave integrated circuits, Rapid thermal annealing, Semiconducting aluminum compounds, Silicon carbide, Transmission line theory, High electron mobility transistors
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Language
English