Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/27439
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
- Conference Paper 
The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C. © 2004 IEEE.