Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier

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Author
Schwindt, R.S.
Kumar V.
Aktas O.
Lee J.-W.
Adesida I.
Date
2004
Journal Title
Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Print ISSN
15508781
Pages
201 - 203
Language
English
Type
Conference Paper
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Please cite this item using this persistent URL
http://hdl.handle.net/11693/27439
Abstract
The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C. © 2004 IEEE.
Published as
http://dx.doi.org/10.1109/CSICS.2004.1392536
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