High-performance solar-blind AlGaN photodetectors
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
290 - 291
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/27436
High-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire structures. n+ and p+ ohmic contacts on GaN were formed with non-annealed titanium (Ti)/aluminum (Al) and nickel (Ni)/ gold (Au) alloys. Spectral UV photoresponse measurements confirmed the solar-blind response of the devices.