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dc.contributor.authorSevik, Cemen_US
dc.contributor.authorYılmaz, Dündar E.en_US
dc.contributor.authorBulutay, Ceyhunen_US
dc.coverage.spatialFlagstaff, Arizona, USAen_US
dc.date.accessioned2016-02-08T11:51:51Zen_US
dc.date.available2016-02-08T11:51:51Zen_US
dc.date.issued2005en_US
dc.identifier.issn0094-243Xen_US
dc.identifier.urihttp://hdl.handle.net/11693/27382en_US
dc.descriptionDate of Conference: 26-30 July 2004en_US
dc.descriptionConference Name: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, ICPS-27 2004en_US
dc.description.abstractHigh field transport in wide bandgap semiconductors like GaN is of great technological importance. The negative differential mobility regime at high fields, under suitable conditions, can lead to millimeter-wave Gunn oscillations. Using extensive simulation based an ensemble Monte Carlo technique, the prospects of GaN Gunn diodes are theoretically investigated. The possibility of operating these Gunn diodes at their higher harmonic modes are explored. Main finding of this research is that the carrier dynamics in GaN can be tailored by an optimum choice of doping profile, temperature and bias conditions so that the efficiency of higher harmonic Gunn oscillations can be boosted.en_US
dc.language.isoEnglishen_US
dc.source.titleAIP Conference Proceedingsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1994078en_US
dc.subjectGunn oscillationsen_US
dc.subjectHigh field transporten_US
dc.subjectNegative differential mobility regimeen_US
dc.subjectMonte Carlo techniqueen_US
dc.subjectGunn diodesen_US
dc.titleHarmonic enhancement of Gunn oscillations in GaNen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage231en_US
dc.citation.epage232en_US
dc.citation.volumeNumber772en_US
dc.identifier.doi10.1063/1.1994078en_US
dc.publisherAmerican Institute of Physicsen_US


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