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dc.contributor.authorSchwindt, R.en_US
dc.contributor.authorKumar, V.en_US
dc.contributor.authorAktas, O.en_US
dc.contributor.authorLee, J. W.en_US
dc.contributor.authorAdesida, I.en_US
dc.date.accessioned2016-02-08T11:51:36Z
dc.date.available2016-02-08T11:51:36Z
dc.date.issued2005-04en_US
dc.identifier.issn1610-1634
dc.identifier.urihttp://hdl.handle.net/11693/27371
dc.description.abstractA fully monolithic AlGaN/GaN HEMT-based low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of -7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz. The dc characteristics of individual 0.25-μm × 150-μm transistors were: maximum current density of 1.0 A/mm, maximum transconductance of 170 mS/mm and a threshold voltage of -6.8 V. The devices have a typical short circuit current gain cutoff frequency of 24.5 GHz and a maximum oscillating frequency of 48 GHz. The devices demonstrated a minimum noise figure of 1.6 dB with an associated gain of 10.6 dB at 10 GHz.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysica Status Solidi Cen_US
dc.relation.isversionofhttps://doi.org/10.1002/pssc.200461544en_US
dc.subjectAluminum nitrideen_US
dc.subjectAmplifiers (electronic)en_US
dc.subjectCurrent densityen_US
dc.subjectGain measurementen_US
dc.subjectGallium nitrideen_US
dc.subjectNatural frequenciesen_US
dc.subjectOscillationsen_US
dc.subjectSpurious signal noiseen_US
dc.subjectThreshold voltageen_US
dc.subjectTransconductanceen_US
dc.subjectInput return lossen_US
dc.subjectLow noise amplifieren_US
dc.subjectOutput return lossen_US
dc.subjectHigh electron mobility transistorsen_US
dc.titleAlGaN/GaN HEMT-based fully monolithic X-band low noise amplifieren_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage2631en_US
dc.citation.epage2634en_US
dc.citation.volumeNumber2en_US
dc.citation.issueNumber7en_US
dc.identifier.doi10.1002/pssc.200461544en_US
dc.publisherWileyen_US


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