AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier
Author
Schwindt, R.
Kumar, V.
Aktas, O.
Lee, J. W.
Adesida, I.
Date
2005-04Source Title
Physica Status Solidi C
Print ISSN
1610-1634
Publisher
Wiley
Volume
2
Issue
7
Pages
2631 - 2634
Language
English
Type
ArticleItem Usage Stats
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Abstract
A fully monolithic AlGaN/GaN HEMT-based low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of -7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz. The dc characteristics of individual 0.25-μm × 150-μm transistors were: maximum current density of 1.0 A/mm, maximum transconductance of 170 mS/mm and a threshold voltage of -6.8 V. The devices have a typical short circuit current gain cutoff frequency of 24.5 GHz and a maximum oscillating frequency of 48 GHz. The devices demonstrated a minimum noise figure of 1.6 dB with an associated gain of 10.6 dB at 10 GHz.
Keywords
Aluminum nitrideAmplifiers (electronic)
Current density
Gain measurement
Gallium nitride
Natural frequencies
Oscillations
Spurious signal noise
Threshold voltage
Transconductance
Input return loss
Low noise amplifier
Output return loss
High electron mobility transistors