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      • Department of Electrical and Electronics Engineering
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      AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier

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      Author
      Schwindt, R.
      Kumar, V.
      Aktas, O.
      Lee, J. W.
      Adesida, I.
      Date
      2005-04
      Source Title
      Physica Status Solidi C
      Print ISSN
      1610-1634
      Publisher
      Wiley
      Volume
      2
      Issue
      7
      Pages
      2631 - 2634
      Language
      English
      Type
      Article
      Item Usage Stats
      155
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      127
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      Abstract
      A fully monolithic AlGaN/GaN HEMT-based low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of -7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz. The dc characteristics of individual 0.25-μm × 150-μm transistors were: maximum current density of 1.0 A/mm, maximum transconductance of 170 mS/mm and a threshold voltage of -6.8 V. The devices have a typical short circuit current gain cutoff frequency of 24.5 GHz and a maximum oscillating frequency of 48 GHz. The devices demonstrated a minimum noise figure of 1.6 dB with an associated gain of 10.6 dB at 10 GHz.
      Keywords
      Aluminum nitride
      Amplifiers (electronic)
      Current density
      Gain measurement
      Gallium nitride
      Natural frequencies
      Oscillations
      Spurious signal noise
      Threshold voltage
      Transconductance
      Input return loss
      Low noise amplifier
      Output return loss
      High electron mobility transistors
      Permalink
      http://hdl.handle.net/11693/27371
      Published Version (Please cite this version)
      https://doi.org/10.1002/pssc.200461544
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      • Department of Electrical and Electronics Engineering 3597
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