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dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialBoston, MA, United Statesen_US
dc.date.accessioned2016-02-08T11:51:17Z
dc.date.available2016-02-08T11:51:17Z
dc.date.issued2005en_US
dc.identifier.issn0277-786X
dc.identifier.urihttp://hdl.handle.net/11693/27354
dc.descriptionConference name: Proceedings of SPIE, Optoelectronic Devices: Physics, Fabrication, and Application IIen_US
dc.descriptionDate of Conference: 23-26 October 2005en_US
dc.description.abstractDesign, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The resulting solar-blind AlGaN detectors exhibited low dark current, high detectivity, and high bandwidth.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of SPIEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.630086en_US
dc.subjectAlGaNen_US
dc.subjectDetectivityen_US
dc.subjectHeterostructureen_US
dc.subjectHigh-speeden_US
dc.subjectMSMen_US
dc.subjectp-i-nen_US
dc.subjectPhotodetectoren_US
dc.subjectSchottkyen_US
dc.subjectSolar-blinden_US
dc.subjectUVen_US
dc.subjectBandwidthen_US
dc.subjectDesignen_US
dc.subjectFabricationen_US
dc.subjectHeterojunctionsen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconductor metal boundariesen_US
dc.subjectUltraviolet detectorsen_US
dc.subjectAlGaNen_US
dc.subjectDetectivityen_US
dc.subjectHigh-speeden_US
dc.subjectMetal-semiconductor-metalen_US
dc.subjectSolar-blinden_US
dc.subjectPhotodetectorsen_US
dc.titleDesign, fabrication and characterization of high-performance solarblind AlGaN photodetectorsen_US
dc.typeConference Paperen_US
dc.departmentUNAM - Institute of Materials Science and Nanotechnology
dc.citation.volumeNumber6013en_US
dc.identifier.doi10.1117/12.630086en_US
dc.publisherSPIEen_US


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