Design, fabrication and characterization of high-performance solarblind AlGaN photodetectors
Please cite this item using this persistent URL
http://hdl.handle.net/11693/27354Journal
Proceedings of SPIE - The International Society for Optical Engineering
Published as
http://dx.doi.org/10.1117/12.630086Collections
- Conference Paper [2294]
Abstract
Design, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The resulting solar-blind AlGaN detectors exhibited low dark current, high detectivity, and high bandwidth.