Design, fabrication and characterization of high-performance solarblind AlGaN photodetectors
Author(s)
Date
2005Source Title
Proceedings of SPIE
Print ISSN
0277-786X
Publisher
SPIE
Volume
6013
Language
English
Type
Conference PaperItem Usage Stats
107
views
views
18
downloads
downloads
Abstract
Design, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The resulting solar-blind AlGaN detectors exhibited low dark current, high detectivity, and high bandwidth.
Keywords
AlGaNDetectivity
Heterostructure
High-speed
MSM
p-i-n
Photodetector
Schottky
Solar-blind
UV
Bandwidth
Design
Fabrication
Heterojunctions
Schottky barrier diodes
Semiconductor metal boundaries
Ultraviolet detectors
AlGaN
Detectivity
High-speed
Metal-semiconductor-metal
Solar-blind
Photodetectors