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dc.contributor.authorToprak, Ahmeten_US
dc.contributor.authorKurt, Gökhanen_US
dc.contributor.authorŞen, Özlem A.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialRome, Italyen_US
dc.date.accessioned2016-02-08T11:47:16Z
dc.date.available2016-02-08T11:47:16Z
dc.date.issued2014en_US
dc.identifier.urihttp://hdl.handle.net/11693/27197
dc.descriptionDate of Conference: 6-7 October 2014en_US
dc.descriptionConference Name: 9th European Microwave Integrated Circuit Conference, EuMIC 2014en_US
dc.description.abstractIn this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate lengths of 0.2, 0.3, 0.5 and 0.7 μm have been fabricated. Great enhancement in radio frequency (RF) output power density was achieved with acceptable compromise in small signal gain. When biased at 35 V, at 3 dB gain compression, a continuous wave output power density of 5.2 W/mm, power-added efficiency (PAE) of 33% and small gain of 11.4 dB were obtained at 8 GHz using device with 0.5 μm field plate length and 800 μm gate width without using via hole technology.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of the 9th European Microwave Integrated Circuit Conference, EuMIC 2014en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/EuMIC.2014.6997843en_US
dc.subjectCoplanar waveguideen_US
dc.subjectField plateen_US
dc.subjectGaN HEMTen_US
dc.subjectPower amplifiersen_US
dc.subjectRF power applicationsen_US
dc.subjectHigh electron mobility transistorsen_US
dc.titleStructural field plate length optimization for high power applicationsen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.citation.spage265en_US
dc.citation.epage268en_US
dc.identifier.doi10.1109/EuMIC.2014.6997843en_US
dc.publisherIEEEen_US


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