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      Structural field plate length optimization for high power applications

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      Author(s)
      Toprak, Ahmet
      Kurt, Gökhan
      Şen, Özlem A.
      Özbay, Ekmel
      Date
      2014
      Source Title
      Proceedings of the 9th European Microwave Integrated Circuit Conference, EuMIC 2014
      Publisher
      IEEE
      Pages
      265 - 268
      Language
      English
      Type
      Conference Paper
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      Abstract
      In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate lengths of 0.2, 0.3, 0.5 and 0.7 μm have been fabricated. Great enhancement in radio frequency (RF) output power density was achieved with acceptable compromise in small signal gain. When biased at 35 V, at 3 dB gain compression, a continuous wave output power density of 5.2 W/mm, power-added efficiency (PAE) of 33% and small gain of 11.4 dB were obtained at 8 GHz using device with 0.5 μm field plate length and 800 μm gate width without using via hole technology.
      Keywords
      Coplanar waveguide
      Field plate
      GaN HEMT
      Power amplifiers
      RF power applications
      High electron mobility transistors
      Permalink
      http://hdl.handle.net/11693/27197
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/EuMIC.2014.6997843
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Department of Physics 2397
      • Nanotechnology Research Center (NANOTAM) 1063
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