Structural field plate length optimization for high power applications
Date
2014Source Title
Proceedings of the 9th European Microwave Integrated Circuit Conference, EuMIC 2014
Publisher
IEEE
Pages
265 - 268
Language
English
Type
Conference PaperItem Usage Stats
212
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173
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Abstract
In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate lengths of 0.2, 0.3, 0.5 and 0.7 μm have been fabricated. Great enhancement in radio frequency (RF) output power density was achieved with acceptable compromise in small signal gain. When biased at 35 V, at 3 dB gain compression, a continuous wave output power density of 5.2 W/mm, power-added efficiency (PAE) of 33% and small gain of 11.4 dB were obtained at 8 GHz using device with 0.5 μm field plate length and 800 μm gate width without using via hole technology.
Keywords
Coplanar waveguideField plate
GaN HEMT
Power amplifiers
RF power applications
High electron mobility transistors