Structural field plate length optimization for high power applications
European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference
Institute of Electrical and Electronics Engineers Inc.
265 - 268
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In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate lengths of 0.2, 0.3, 0.5 and 0.7 μm have been fabricated. Great enhancement in radio frequency (RF) output power density was achieved with acceptable compromise in small signal gain. When biased at 35 V, at 3 dB gain compression, a continuous wave output power density of 5.2 W/mm, power-added efficiency (PAE) of 33% and small gain of 11.4 dB were obtained at 8 GHz using device with 0.5 μm field plate length and 800 μm gate width without using via hole technology. © 2014 European Microwave Association-EUMA.
RF power applications
Field effect transistors
Microwave integrated circuits
Plates (structural components)
Radio frequency amplifiers
Continuous wave output power
Gan high electron mobility transistors
High power applications
Output power density
RF power applications
High electron mobility transistors
Published Version (Please cite this version)http://dx.doi.org/10.1109/EuMIC.2014.6997843
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