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      Blue InGaN/GaN-based quantum electroabsorption modulators

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      Author
      Sarı, Emre
      Nizamoğlu, Sedat.
      Özel, Tuncay
      Demir, Hilmi Volkan
      Date
      2006
      Source Title
      2006 Conference on Optoelectronic and Microelectronic Materials and Devices
      Publisher
      IEEE
      Pages
      18 - 20
      Language
      English
      Type
      Conference Paper
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      Abstract
      We introduce InGaN/GaN-based quantum electroabsorption modulator that incorporates ∼5 nm thick In0.35Ga0.65N/GaN quantum structures for operation in the blue spectral range of 420-430 nm. This device exhibits an optical absorption coefficient change of ∼6000 cm-1 below the band edge at highly transmissive, blue region (at λ peak=424 nm) with a 6 V swing and emits blue light (at λpeak=440 nm) with an optical output power of 0.35 mW at a 20 mA current injection level. Unlike infrared III-V quantum modulators, this blue modulator shows a blue shift in its electroabsorption (for λ < 418 nm) with increasing applied field accross it, due to high alternating polarization fields in its quantum structures; this electroabsorption behavior is opposite to the conventional quantum confined Stark effect that features common red shift. This device holds great promise for > 10 GHz optical clock injection directly into silicon CMOS chips in the blue because of its low parasitic in-series resistance (< 100 Ω) and the possibility to make smaller device mesas for low capacitance (1.2 fF for a 10μm×10μm mesa size). Considering high-speed operation and high responsivity of silicon-on-insulator (SOI) photodetectors in the blue range, unlike in the infrared, this approach eliminates the need for on-chip hybrid integration of Si CMOS with III-V photodetectors. Furthermore, the efficient electroluminescence of this device makes it feasible to consider on-chip blue laser-modulator integration for a compact optical clocking scheme. © 2006 IEEE.
      Keywords
      Electroabsorption
      GaN
      InGaN
      Modulator
      Quantum structure
      Light absorption
      Modulators
      Pigments
      Electroabsorption (EA)
      InGaN/GaN
      Microelectronic materials
      Electroabsorption modulators
      Permalink
      http://hdl.handle.net/11693/27179
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/COMMAD.2006.4429867
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
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