Computer-controlled characterization of high-voltage, high-frequency SiC devices?
Author
Ortiz-Rodriguez, J. M.
Hefner, A. R.
Berning, D.
Hood, C.
Ölçüm, Selim
Date
2006Source Title
Proceedings of the 10th IEEE Workshop on Computers in Power Electronics, IEEE 2006
Print ISSN
1093-5142
Publisher
IEEE
Pages
300 - 305
Language
English
Type
Conference PaperItem Usage Stats
140
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Abstract
A software-based high-voltage curve tracer application for SiC device characterization is presented. This flexible application interface is developed to define testing parameters needed to control the hardware of a custom-made 25 kV-capable SiC characterization test bed. Data acquisition is controlled for optimum resolution, and I-V characterization is computed by means of a user-defined time interval based on the shape of the applied power pulses. Both voltage and current waveforms are displayed for each data point captured to allow the user to observe transient effects. Additionally, the software allows archiving some or all of these transient waveforms. Acquired results are shown to demonstrate functionality and flexibility of the new system.
Keywords
Data acquisitionEquipment testing
Silicon carbide
Computer-controlled
Current waveforms
Data points
Device characterization
High-frequency (HF)
High-voltage (HV)
I-V characterization
Power pulses
SiC devices
Software-based
Test beds
Time intervals
Transient effects
Waveforms
Power electronics