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dc.contributor.authorAkça, Imran B.en_US
dc.contributor.authorDana, Aykutluen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorRossetti, M.en_US
dc.contributor.authorLi L.en_US
dc.contributor.authorFiore, A.en_US
dc.contributor.authorDagli, N.en_US
dc.coverage.spatialSan Jose, California United Statesen_US
dc.date.accessioned2016-02-08T11:45:29Z
dc.date.available2016-02-08T11:45:29Z
dc.date.issued2007en_US
dc.identifier.issn2162-2701
dc.identifier.urihttp://hdl.handle.net/11693/27132
dc.descriptionConference name: Frontiers in Optics 2007en_US
dc.descriptionDate of Conference: 16–20 September 2007en_US
dc.description.abstractElectric field dependence of optical modulation in self assembled InAs quantum dot waveguides have been studied at 1300 and 1500 nm. Electro-absorption and electro-optic coefficients of these waveguides have been obtained at both wavelengths. © 2007 Optical Society of America.en_US
dc.language.isoEnglishen_US
dc.source.titleFrontiers in Optics 2007/Laser Science XXIII/Organic Materials and Devices for Displays and Energy Conversionen_US
dc.relation.isversionofhttps://doi.org/10.1364/FIO.2007.FMD3en_US
dc.subjectElectric fieldsen_US
dc.subjectIndium arsenideen_US
dc.subjectModulationen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectElectric field dependenceen_US
dc.subjectElectro optic coefficienten_US
dc.subjectElectro-absorptionen_US
dc.subjectInAs quantum dotsen_US
dc.subjectSelf-assembleden_US
dc.subjectWaveguidesen_US
dc.titleModulation of multilayer InAs quantum dot waveguides under applied electric fielden_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.identifier.doi10.1364/FIO.2007.FMD3en_US
dc.publisherOptical Society of Americaen_US
dc.contributor.bilkentauthorAydınlı, Atilla


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