Modulation of multilayer InAs quantum dot waveguides under applied electric field

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Author(s)
Date
2007
Source Title
Frontiers in Optics 2007/Laser Science XXIII/Organic Materials and Devices for Displays and Energy Conversion
Print ISSN
2162-2701
Publisher
Optical Society of America
Language
English
Type
Conference Paper
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Abstract
Electric field dependence of optical modulation in self assembled InAs quantum dot waveguides have been studied at 1300 and 1500 nm. Electro-absorption and electro-optic coefficients of these waveguides have been obtained at both wavelengths. © 2007 Optical Society of America.
Keywords
Electric fields
Indium arsenide
Modulation
Semiconductor quantum dots
Electric field dependence
Electro optic coefficient
Electro-absorption
InAs quantum dots
Self-assembled
Waveguides
Permalink
http://hdl.handle.net/11693/27132
Published Version (Please cite this version)
https://doi.org/10.1364/FIO.2007.FMD3
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