Modulation of multilayer InAs quantum dot waveguides under applied electric field

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Modulation of multilayer InAs quantum dot waveguides under applied electric field.pdf (72.61 KB)

Date

2007

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Abstract

Electric field dependence of optical modulation in self assembled InAs quantum dot waveguides have been studied at 1300 and 1500 nm. Electro-absorption and electro-optic coefficients of these waveguides have been obtained at both wavelengths. © 2007 Optical Society of America.

Source Title

Frontiers in Optics 2007/Laser Science XXIII/Organic Materials and Devices for Displays and Energy Conversion

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Optical Society of America

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Keywords

Electric fields, Indium arsenide, Modulation, Semiconductor quantum dots, Electric field dependence, Electro optic coefficient, Electro-absorption, InAs quantum dots, Self-assembled, Waveguides

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http://hdl.handle.net/11693/27132

Published Version (Please cite this version)

https://doi.org/10.1364/FIO.2007.FMD3

Collections

Scholarly Publications - Physics
Scholarly Publications - UNAM

Language

English

Type

Conference Paper