Modulation of multilayer InAs quantum dot waveguides under applied electric field
Date
2007Source Title
Optics InfoBase Conference Papers
Print ISSN
21622701
Publisher
Optical Society of America
Language
English
Type
Conference PaperItem Usage Stats
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Electric field dependence of optical modulation in self assembled InAs quantum dot waveguides have been studied at 1300 and 1500 nm. Electro-absorption and electro-optic coefficients of these waveguides have been obtained at both wavelengths. © 2007 Optical Society of America.
Keywords
Electric fieldsIndium arsenide
Modulation
Semiconductor quantum dots
Electric field dependence
Electro optic coefficient
Electro-absorption
InAs quantum dots
Self-assembled
Waveguides