Modulation of multilayer InAs quantum dot waveguides under applied electric field
Optics InfoBase Conference Papers
Optical Society of America
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/27132
Electric field dependence of optical modulation in self assembled InAs quantum dot waveguides have been studied at 1300 and 1500 nm. Electro-absorption and electro-optic coefficients of these waveguides have been obtained at both wavelengths. © 2007 Optical Society of America.
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