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dc.contributor.authorAkca, B. Imranen_US
dc.contributor.authorDana, Aykutluen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorRossetti, M.en_US
dc.contributor.authorLi L.en_US
dc.contributor.authorFiore, A.en_US
dc.contributor.authorDagli, N.en_US
dc.coverage.spatialMunich, Germanyen_US
dc.date.accessioned2016-02-08T11:45:12Z
dc.date.available2016-02-08T11:45:12Z
dc.date.issued2007en_US
dc.identifier.issn2162-2701
dc.identifier.urihttp://hdl.handle.net/11693/27123
dc.descriptionDate of Conference: 17-22 June 2007en_US
dc.description.abstractIn this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active region is formed by three or five layers of self-assembled InAs QDs. Loss characterization were carried out by using a 1.3 μm light from a thermally tunable laser. Transmission through the device was recorded as a function of wavelength. Loss coefficient is found to be wavelength and bias voltage dependenten_US
dc.language.isoEnglishen_US
dc.source.title2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conferenceen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/CLEOE-IQEC.2007.4386080en_US
dc.titleCharacterization of multilayer self-organized InAs quantum dot embedded waveguides at 1.3 and 1.5 μmen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.identifier.doi10.1109/CLEOE-IQEC.2007.4386080en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorAydınlı, Atilla


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